Features
•
Single Supply Voltage Range, 2.7V to 3.6V
•
Single Supply for Read and Write
•
Fast Read Access Time – 70 ns
•
Internal Program Control and Timer
•
8K Bytes Boot Block with Lockout
•
Fast Erase Cycle Time – 10 Seconds
•
Byte-by-Byte Programming – 30 µs/Byte Typical
•
Hardware Data Protection
•
DATA Polling for End of Program Detection
•
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
•
Typical 10,000 Write Cycles
Description
The AT49BV512 is a 3-volt only, 512K Flash memories organized as 65,536 words of
8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
devices offer access times to 70 ns with power dissipation of just 90 mW over the
commercial temperature range. When the devices are deselected, the CMOS standby
current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49BV512 does not require
high input voltages for programming. Three-volt only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing
Pin Configurations
Pin Name
Function
A0 - A15
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A11
1
32
A9
2
31
A8
3
30
A13
4
29
A14
5
28
NC
6
27
WE
7
26
VCC
8
25
NC
9
24
NC
10
23
A15
11
22
A12
12
21
A7
13
20
A6
14
19
A5
15
18
A4
16
17
DIP Top View
NC
1
32
NC
2
31
A15
3
30
A12
4
29
A7
5
28
A6
6
27
A5
7
26
A4
8
25
A3
9
24
A2
10
23
A1
11
22
A0
12
21
I/O0
13
20
I/O1
14
19
I/O2
15
18
GND
16
17
PLCC Top View
OE
A10
CE
A7
5
I/O7
A6
6
I/O6
A5
7
I/O5
A4
8
I/O4
A3
9
I/O3
A2
10
GND
A1
11
I/O2
A0
12
I/O1
I/O0
13
I/O0
A0
A1
A2
A3
512K (64K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV512
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
29
A14
28
A13
27
A8
26
A9
25
A11
24
OE
23
A10
22
CE
21
I/O7
Rev. 1026E–FLASH–06/02
™
1