AT28BV64B-20SA Atmel, AT28BV64B-20SA Datasheet - Page 6

• Manufacturer Part Number: AT28BV64B-20SA
• Description: IC EEPROM 64KBIT 200NS 28SOIC
• Manufacturer: Atmel

Specifications of AT28BV64B-20SA

• Format - Memory: EEPROMs - Parallel
• Memory Type: EEPROM
• Memory Size: 64K (8K x 8)
• Speed: 200ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 28-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

8. DC Characteristics
9. AC Read Characteristics
10. AC Read Waveforms
Notes:
6
Symbol
I
I
I
I
V
V
V
V
Symbol
t
t
t
t
t
LI
LO
SB
CC
ACC
CE
OE
DF
OH
IL
IH
OL
OH
(1)
(3)(4)
(2)
1. CE may be delayed up to t
2. OE may be delayed up to t
3. t
4. This parameter is characterized and is not 100% tested.
AT28BV64B
without impact on t
DF
is specified from OE or CE whichever occurs first (C
Parameter
Input Load Current
Output Leakage Current
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
CC
CC
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE or Address, Whichever Occurred First
Active Current
Standby Current CMOS
ACC
.
ACC
CE
(1)(2)(3)(4)
- t
- t
OE
CE
after the falling edge of CE without impact on t
after the address transition without impact on t
Condition
V
V
CE = V
f = 5 MHz; I
I
I
OL
OH
IN
I/O
= 1.6 mA
= -100 µA
= 0V to V
= 0V to V
CC
- 0.3V to V
OUT
CC
L
CC
= 5 pF).
= 0 mA
+ 1V
CC
+ 1V
Min
2.0
2.0
CE
ACC
Min
or by t
0
0
0
AT28BV64B-20
.
ACC
- t
OE
Max
0.45
0.6
10
10
50
15
Max
200
200
after an address change
80
55
0299I–PEEPR–4/09
Units
Units
mA
µA
µA
µA
V
V
V
V
ns
ns
ns
ns
ns