MT28F004B3VG-8 B TR Micron Technology Inc, MT28F004B3VG-8 B TR Datasheet - Page 24

IC FLASH 4MBIT 80NS 40TSOP

MT28F004B3VG-8 B TR

Manufacturer Part Number
MT28F004B3VG-8 B TR
Description
IC FLASH 4MBIT 80NS 40TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT28F004B3VG-8 B TR

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8)
Speed
80ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 15: Speed-Dependent WRITE/ERASE AC Timing Characteristics and
Commercial Temperature (0°C ≤ T
Table 16: Word/Byte WRITE and ERASE Duration Characteristics
NOTE:
09005aef8114a789
F45.fm - Rev. E 6/04 EN
ACCHARACTERISTICS
PARAMETER
PARAMETER
WRITE cycle time
WE# (CE#) HIGH pulse width
WE# (CE#) pulse width
Address setup time to WE# (CE#) HIGH
Address hold time from WE# (CE#) HIGH
Data setup time to WE# (CE#) HIGH
Data hold time from WE# (CE#) HIGH
CE# (WE#) setup time to WE# (CE#) LOW
CE# (WE#) hold time from WE# (CE#) HIGH
V
V
RP# HIGH to WE# (CE#) LOW delay
RP# at V
WRITE duration (WORD or BYTE WRITE)
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
WE# (CE#) HIGH to busy status (SR7 = 0)
V
RP# at V
Boot block relock delay time
Boot/parameter BLOCK ERASE time
Main BLOCK ERASE time
Main BLOCK WRITE time (byte mode)
Main BLOCK WRITE time (word mode)
1. Measured with
2. Measured with
3. RP# should be held at
4. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
5. Polling status register before tWB is met may falsely indicate WRITE or ERASE completion.
6.
7. Typical values measured at T
8. Assumes no system overhead.
9. Typical WRITE times use checkerboard data pattern.
PP
PP
PP
t
REL is required to relock boot block after WRITE or ERASE to boot block.
setup time to WE# (CE#) HIGH
setup time to WE# (CE#) HIGH
hold time from status data valid
HH
HH
or WP# HIGH setup time to WE# (CE#) HIGH
or WP# HIGH hold time from status data valid
Recommended AC Operating Conditions: WE# (CE#)-Controlled WRITEs
V
V
PP
PP
= V
= V
V
PPH
PPH
HH
1 = 3.3V.
2 = 5V.
or WP# held HIGH until boot block WRITE or ERASE is complete.
A
A
= +25ºC.
≤ +70°C) and Extended Temperature (-40°C ≤ T
SMART 3 BOOT BLOCK FLASH MEMORY
TYP
0.4
2.8
1.5
1.5
24
t
WPH (
3.3V V
t
SYMBOL
t
t
CH (
WP (
CS (
t
t
t
t
t
t
WED1
WED2
WED3
WED4
t
t
t
VPS1
VPS2
t
t
t
t
t
RHH
VPH
t
t
RHS
WC
t
WB
REL
AH
DH
AS
DS
RS
t
t
WS)
WH)
t
t
CPH)
CP)
PP
MAX
14
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
1,000
MIN
200
100
100
100
100
500
200
80
20
50
50
50
0
0
0
0
2
0
0
TYP
A
0.4
1.5
1
1
-8/-8 ET
≤ +85°C); Vcc = +3.3V ±0.3V
5V V
MAX
PP
100
MAX
14
7
©2003 Micron Technology, Inc. All rights reserved.
UNITS
UNITS
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
s
s
s
s
4Mb
NOTES
NOTES
7, 8, 9
7, 8, 9
1
2
3
5
5
5
5
4
5
3
6
7
7

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