MT28F004B3VG-8 T TR Micron Technology Inc, MT28F004B3VG-8 T TR Datasheet - Page 18

IC FLASH 4MBIT 80NS 40TSOP

MT28F004B3VG-8 T TR

Manufacturer Part Number
MT28F004B3VG-8 T TR
Description
IC FLASH 4MBIT 80NS 40TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT28F004B3VG-8 T TR

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8)
Speed
80ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings*
Voltage on V
Input Voltage Relative to V
V
RP# or A9 Pin Voltage
Temperature Under Bias . . . . . . -40ºC to +85ºC Storage
Temperature (plastic) . . . . . . . . . . . . . . . -55ºC to +125ºC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Table 8:
Commercial Temperature (0°C ≤ T
Table 9:
Commercial Temperature (0°C ≤ T
NOTE:
09005aef8114a789
F45.fm - Rev. E 6/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
3.3V Supply Voltage
Input High (Logic 1) Voltage, all inputs
Input Low (Logic 0) Voltage, all inputs
Device Identification Voltage, A9
V
OUTPUT VOLTAGE LEVELS
Output High Voltage (I
Output Low Voltage (I
INPUT LEAKAGE CURRENT
Any input (0V ≤ VIN ≤ Vcc);
All other pins not under test = 0V
INPUT LEAKAGE CURRENT: A9 INPUT
(10V ≤ A9 ≤ 12V = V
INPUT LEAKAGE CURRENT: RP# INPUT
(10V ≤ RP# ≤ 12V = V
OUTPUT LEAKAGE CURRENT
(D
1. All voltages referenced to V
PP
PP
Relative to V
Relative to V
OUT
Voltage Relative to V
Supply Voltage
is disabled; 0V ≤ V
CC
Electrical Characteristics and Recommended DC READ Operating
Conditions
DC Operating Characteristics
SS
SS
Supply
. . . . . . . . . . . . . . . . . . . . . -0.5V to +4V**
. . . . . . . . . . . . . . . . . . .-0.5V to +12.6V
ID
HH
)
OL
OH
)
OUT
= 2mA)
SS
= -100µA)
SS
. . . . . . . . . . . . -0.5V to +5.5V
≤ Vcc)
. . . . . . . . . . . -0.5V to +4V**
SS
.
A
A
≤ +70°C) and Extended Temperature (-40°C ≤ T
≤ +70°C) and Extended Temperature (-40°C ≤ T
SMART 3 BOOT BLOCK FLASH MEMORY
††
18
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
**V
<20ns and V
††
<20ns.
SYMBOL
SYMBOL
Voltage may pulse to -2V for <20ns and 7V for <20ns.
Voltage may pulse to -2V for <20ns and 14V for
CC
V
V
V
V
V
V
I
I
V
I
HH
OZ
I
OH
ID
OL
CC
IH
ID
PP
L
IL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
, input and I/O pins may transition to -2V for
CC
Vcc - 0.2
+ 2V for <20ns.
MIN
MIN
-0.5
-0.5
A
A
-10
10
-1
3
2
≤ +85°C)
≤ +85°C)
V
CC
MAX
MAX
12.6
0.45
500
500
3.6
0.8
5.5
10
1
+ 0.5
©2003 Micron Technology, Inc. All rights reserved.
UNITS
UNITS
µA
µA
µA
µA
V
V
V
V
V
V
V
4Mb
NOTES
NOTES
1
1
1
1
1
1

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