MT28F004B3VG-8 TET TR Micron Technology Inc, MT28F004B3VG-8 TET TR Datasheet - Page 14

IC FLASH 4MBIT 80NS 40TSOP

MT28F004B3VG-8 TET TR

Manufacturer Part Number
MT28F004B3VG-8 TET TR
Description
IC FLASH 4MBIT 80NS 40TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT28F004B3VG-8 TET TR

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8)
Speed
80ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
WRITE/ERASE Cycle Endurance
and fabricated to meet advanced firmware storage
requirements. To ensure this level of reliability, V
must be at 3.3V ±0.3V or 5V ±10% during WRITE or
ERASE cycles. Due to process technology advances, 5V
V
gramming.
Power Usage
power-saving features that may be utilized in the array
read mode to conserve power. Deep power-down
mode is enabled by bringing RP# LOW. Current draw
(I
When CE# is HIGH, the device enters standby mode. In
this mode, maximum I
If CE# is brought HIGH during a WRITE or ERASE, the
ISM continues to operate, and the device consumes
the respective active power until the WRITE or ERASE
is completed.
09005aef8114a789
F45.fm - Rev. E 6/04 EN
PP
CC
The MT28F004B3 and MT28F400B3 are designed
The MT28F004B3 and MT28F400B3 offer several
) in this mode is a maximum of 8µA at 3.3V V
is optimal for application and production pro-
CC
current is 100µA at 3.3V V
SMART 3 BOOT BLOCK FLASH MEMORY
CC
CC
PP
.
.
14
Power-Up
tions is minimized because two consecutive cycles are
required to execute either operation. However, to reset
the ISM and to provide additional protection while V
is ramping, one of the following conditions must be
met:
reset, and the device enters the array read mode.
NOTE:
1. Vcc must be within the valid operating range before
The likelihood of unwanted WRITE or ERASE opera-
• RP# must be held LOW until V
• CE# or WE# may be held HIGH and RP# must be
After a power-up or RESET, the status register is
RP# goes HIGH.
Address
Figure 4: Power-Up/Reset Timing
(3.3V)
tional level; or
toggled from V
Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RP#
V
NOTE:
CC
1. V
goes HIGH.
CC
Note 1
must be within the valid operating range before RP#
CC
Diagram
-GND-V
t
RWH
t
AA
©2003 Micron Technology, Inc. All rights reserved.
CC
VALID
.
VALID
CC
is at valid func-
UNDEFINED
4Mb
CC

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