MT28F004B3VG-8 TET TR Micron Technology Inc, MT28F004B3VG-8 TET TR Datasheet - Page 15

IC FLASH 4MBIT 80NS 40TSOP

MT28F004B3VG-8 TET TR

Manufacturer Part Number
MT28F004B3VG-8 TET TR
Description
IC FLASH 4MBIT 80NS 40TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT28F004B3VG-8 TET TR

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8)
Speed
80ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
NOTE:
09005aef8114a789
F45.fm - Rev. E 6/04 EN
1. Sequence may be repeated for additional BYTE or WORD WRITEs.
2. Complete status check is not required. However, if SR3 = 1, further WRITEs are inhibited until the status register is
3. Device will be in status register read mode. To return to the array read mode, the FFh command must be issued.
4. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE or
5. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
Figure 5: Self-Timed WRITE Sequence
cleared.
ERASE operations are allowed by the CEL.
(Word or Byte WRITE)
WRITE Word or Byte
WRITE 40h or 10h
STATUS REGISTER
WRITE Complete
Check (optional)
Complete Status
Address/Data
SR7 = 1?
V
READ
Start
PP
= 5V
YES
2
3
NO
1
SMART 3 BOOT BLOCK FLASH MEMORY
15
Start (WRITE completed)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE Successful
Figure 6: Complete WRITE
Status-Check Sequence
SR3 = 0?
SR4 = 0?
YES
YES
NO
NO
©2003 Micron Technology, Inc. All rights reserved.
V
BYTE/WORD WRITE Error
PP
Error
4, 5
4Mb
5

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