IC FLASH 8MBIT 90NS 48TSOP

 

MT28F800B3WG-9 T

Manufacturer Part NumberMT28F800B3WG-9 T
DescriptionIC FLASH 8MBIT 90NS 48TSOP
ManufacturerMicron Technology Inc
MT28F800B3WG-9 T datasheets

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Specifications of MT28F800B3WG-9 T

Format - MemoryFLASHMemory TypeFLASH - Nor
Memory Size8M (1M x 8 or 512K x 16)Speed90ns
InterfaceParallelVoltage - Supply3 V ~ 3.6 V
Operating Temperature0°C ~ 70°CPackage / Case48-TSOP
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant  
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Table 2:
Truth Table (MT28F800B3)
FUNCTION
RP#
Standby
RESET
READ
READ (word mode)
READ (byte mode)
Output Disable
WRITE/ERASE (EXCEPT BOOT BLOCK)
ERASE SETUP
3
ERASE CONFIRM
WRITE SETUP
4
WRITE (word mode)
4
WRITE (byte mode)
5
READ ARRAY
2, 7
WRITE/ERASE (BOOT BLOCK)
ERASE SETUP
3
V
ERASE CONFIRM
3, 6
ERASE CONFIRM
WRITE SETUP
4
V
WRITE (word mode)
4, 6
WRITE (word mode)
4
WRITE (byte mode)
V
4, 6
WRITE (byte mode)
5
READ ARRAY
8, 9
DEVICE IDENTIFICATION
Manufacturer Compatibility
10
(word mode)
Manufacturer Compatibility
(byte mode)
10
Device (word mode, top boot)
Device (byte mode, top boot)
Device (word mode, bottom
10
boot)
Device (byte mode, bottom
boot)
NOTE:
1. L = V
(LOW), H = V
(HIGH), X = V
IL
IH
2. V
= V
1 = 3.3V or V
2 = 5V.
PPH
PPH
PPH
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = V
, RP# may be at V
IH
7. V
= 12V.
HH
8. V
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
ID
9. A1–A8, A10–A18 = V
.
IL
10. Value reflects DQ8–DQ15.
09005aef81136a91
Q10.fm - Rev. E 6/04 EN
SMART 3 BOOT BLOCK FLASH MEMORY
1
CE#
OE# WE# WP#
BYTE#
H
H
X
X
X
X
L
X
X
X
X
X
H
L
L
H
X
H
H
L
L
H
X
L
H
L
H
H
X
X
2
H
L
H
L
X
X
H
L
H
L
X
X
H
L
H
L
X
X
H
L
H
L
X
H
H
L
H
L
X
L
H
L
H
L
X
X
H
L
H
L
X
X
L
H
L
X
X
HH
H
L
H
L
H
X
H
L
H
L
X
X
L
H
L
X
H
HH
H
L
H
L
H
H
L
H
L
X
L
HH
H
L
H
L
H
L
H
L
H
L
X
X
H
L
L
H
X
H
H
L
L
H
X
L
H
L
L
H
X
H
H
L
L
H
X
L
H
L
L
H
X
H
H
L
L
H
X
L
or V
(“Don’t Care”).
IL
IH
or V
.
IH
HH
5
DQ0–
DQ8–
V
A0
A9
DQ7
DQ14
PP
X
X
X
High-Z
High-Z
X
X
X
High-Z
High-Z
X
X
X
Data-Out Data-Out Data-Out
X
X
X
Data-Out
High-Z
X
X
X
High-Z
High-Z
X
X
X
20h
X
X
V
D0h
PPH
X
X
X
10h/40h
X
X
V
Data-In
Data-In
PPH
X
X
V
Data-In
PPH
X
X
X
FFh
X
X
X
20h
X
X
V
D0h
PPH
X
X
V
D0h
PPH
X
X
X
10h/40h
X
X
V
Data-In
Data-In
PPH
X
X
V
Data-In
Data-In
PPH
X
X
V
Data-In
PPH
X
X
v
Data-In
X
X
X
FFh
L
V
X
89h
ID
L
V
X
89h
High-Z
ID
H
V
X
9Ch
ID
H
V
X
9Ch
High-Z
ID
H
V
X
9Dh
ID
H
V
X
9Dh
High-Z
ID
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001 Micron Technology, Inc. All rights reserved.
8Mb
DQ15/
A-1
High-Z
High-Z
A-1
High-Z
X
X
X
X
X
X
Data-In
X
A-1
X
X
X
X
X
X
X
X
X
X
Data-In
Data-In
X
A-1
X
A-1
X
X
00h
X
88h
X
88h
X