MT45W1MW16BAFB-706 WT Micron Technology Inc, MT45W1MW16BAFB-706 WT Datasheet - Page 29

IC PSRAM 16MBIT 70NS 54FBGA

MT45W1MW16BAFB-706 WT

Manufacturer Part Number
MT45W1MW16BAFB-706 WT
Description
IC PSRAM 16MBIT 70NS 54FBGA
Manufacturer
Micron Technology Inc

Specifications of MT45W1MW16BAFB-706 WT

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Maximum and Typical Standby Currents
Table 10:
Table 11:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
PAR
PAR
Full Array
1/2 Array
1/4 Array
1/8 Array
0 Array
Full Array
1/2 Array
1/4 Array
1/8 Array
0 Array
Maximum Standby Currents for Applying PAR and TCR Settings – 32Mb
Maximum Standby Currents for Applying PAR and TCR Settings – 32Mb Low-Power (L)
Notes: 1. For RCR[6:5] = 00b (default), refer to Figure 23 on page 30 for typical values.
Notes: 1. For RCR[6:5] = 00b (default), refer to Figure 23 on page 30 for typical values.
The following tables and figures refer to the maximum and typical standby currents for
the MT45W2MW16BA and MT45W1MW16BA devices. The typical values shown in Fig-
ure 23 on page 30 and Figure 24 on page 31 are measured with the default on-chip tem-
perature sensor control enabled. The maximum values shown in Table 10, Table 11, and
Table 12 are measured with the relevant TCR bits set in the configuration register.
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
2. In order to achieve low standby current, all inputs must be driven to V
3. TCR values for 85°C are 100 percent tested. TCR values for 15°C and 45°C are sampled only.
2. In order to achieve low standby current, all inputs must be driven to V
3. TCR values for 85°C are 100 percent tested. TCR values for 15°C and 45°C are sampled only.
be slightly higher for up to 500ms after power-up, or after changes to the PAR array por-
tion.
be slightly higher for up to 500ms after power-up, or after changes to the PAR array por-
tion.
+15°C (RCR[6:5] = 10b)
+15°C (RCR[6:5] = 10b)
55
52
48
48
45
70
60
57
55
50
29
Maximum and Typical Standby Currents
+45°C (RCR[6:5] = 01b)
+45°C (RCR[6:5] = 01b)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TCR
TCR
80
65
60
57
55
60
57
53
53
50
©2003 Micron Technology, Inc. All rights reserved.
+85°C (RCR[6:5] = 11b)
+85°C (RCR[6:5] = 11b)
CC
CC
Q or V
Q or V
110
105
95
95
70
90
85
75
75
65
SS
SS
. I
. I
SB
SB
might
might

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