MT45W1MW16BAFB-706 WT Micron Technology Inc, MT45W1MW16BAFB-706 WT Datasheet - Page 48

• Manufacturer Part Number: MT45W1MW16BAFB-706 WT
• Description: IC PSRAM 16MBIT 70NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-706 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 39:
Table 32:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Symbol
t
t
t
t
t
t
t
t
t
AS
AVH
AVS
AW
BW
CEW
CW
DH
DW
Asynchronous WRITE Timing Parameters Using ADV#
Asynchronous WRITE Using ADV#
Min
10
70
70
70
23
0
5
1
0
-70x
Max
7.5
DQ[15:0]
DQ[15:0]
LB#/UB#
A[20:0]
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
ADV#
WAIT
WE#
OUT
OE#
CE#
IN
Min
10
85
85
85
23
0
5
1
0
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IL
IL
IH
OH
IL
IL
IL
IL
IL
IL
OL
IH
-856
t LZ
t VPH
Max
7.5
High-Z
t CEW
High-Z
t AS
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
t AS
t VP
VALID ADDRESS
t AVS
t WHZ
t VS
48
t AW
t CW
t BW
t AVH
Symbol
t
t
t
t
t
t
t
t
t
HZ
LZ
OW
VP
VPH
VS
WHZ
WP
WPH
Maximum and Typical Standby Currents
t WP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID INPUT
t DW
t HZ
Min
10
10
10
70
46
10
5
t OW
t DH
-70x
t WPH
DON’T CARE
High-Z
Max
8
8
©2003 Micron Technology, Inc. All rights reserved.
Min
10
10
10
85
55
10
5
-856
Max
8
8
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns