MT45W1MW16BAFB-708 WT Micron Technology Inc, MT45W1MW16BAFB-708 WT Datasheet - Page 12

IC PSRAM 16MBIT 70NS 54FBGA

MT45W1MW16BAFB-708 WT

Manufacturer Part Number
MT45W1MW16BAFB-708 WT
Description
IC PSRAM 16MBIT 70NS 54FBGA
Manufacturer
Micron Technology Inc

Specifications of MT45W1MW16BAFB-708 WT

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 8:
Figure 9:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
DQ[15:0]
Burst Mode READ (4-word Burst)
DQ[15:0]
Burst Mode WRITE (4-word Burst)
LB#/UB#
LB#/UB#
A[20:0]
A[20:0]
ADV#
ADV#
WAIT
WAIT
WE#
WE#
OE#
CLK
OE#
CE#
CLK
CE#
Note:
Note:
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
WRITE Burst Identified
READ Burst Identified
Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
ADDRESS
(WE# = LOW)
ADDRESS
(WE# = HIGH)
VALID
VALID
Latency Code 2 (3 clocks)
Latency Code 2 (3 clocks)
12
D[0]
D[0]
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
D[1]
DON’T CARE
D[2]
D[2]
Bus Operating Modes
©2003 Micron Technology, Inc. All rights reserved.
UNDEFINED
DON’T CARE
D[3]
D[3]

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