MT45W1MW16BAFB-708 WT TR Micron Technology Inc, MT45W1MW16BAFB-708 WT TR Datasheet - Page 34

• Manufacturer Part Number: MT45W1MW16BAFB-708 WT TR
• Description: IC PSRAM 16MBIT 70NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 17:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Parameter
Burst to READ Access Time
CLK to Output Delay
Burst OE# LOW to Output Delay
CE# HIGH between Subsequent Burst and
Mixed-Mode Operations
Maximum CE# Pulse Width
CE# LOW to WAIT Valid
CLK Period
CE# Setup Time to Active CLK Edge
Hold Time from Active CLK Edge
Chip Disable to DQ and WAIT High-Z Output
CLK Rise or Fall Time
CLK to WAIT Valid
CLK to DQ High-Z Output
CLK to Low-Z Output
Output HOLD from CLK
CLK HIGH or LOW Time
Output Disable to DQ High-Z Output
Output Enable to Low-Z Output
Setup Time to Active CLK Edge
1
Burst READ Cycle Timing Requirements
Notes: 1. All tests are performed with the outputs configured for full drive strength (BCR[5] = 0).
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
3. Clock rates below 50 MHz (
4. Low-Z to High-Z timings are tested with the circuit shown in Figure 26 on page 32. The
5. High-Z to Low-Z timings are tested with the circuit shown in Figure 26 on page 32. The
vided every
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns.
High-Z timings measure a 100mV transition from either V
Low-Z timings measure a 100mV transition away from the High-Z (V
either V
OH
or V
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ABA
ACLK
BOE
CBPH
CEM
CEW
CLK
CSP
HD
HZ
KHKL
KHTL
KHZ
KLZ
KOH
KP
OHZ
OLZ
SP
OL
.
t
34
CLK > 20ns) are allowed as long as
Min
12.5
4.5
5
1
2
3
2
2
4
5
3
Maximum and Typical Standby Currents
-708
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Max
46.5
7.5
1.8
20
20
20
9
8
8
9
8
5
8
Min
15
5
1
5
2
3
2
2
5
5
3
-706/-856
OH
or V
Max
7.5
2.0
©2003 Micron Technology, Inc. All rights reserved.
56
11
20
20
20
11
t
8
8
8
5
8
CSP specifications are met.
OL
toward V
CC
Q/2) level toward
Units
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
2
3
4
4
5
4
5