MT45W1MW16BAFB-708 WT TR Micron Technology Inc, MT45W1MW16BAFB-708 WT TR Datasheet - Page 43

• Manufacturer Part Number: MT45W1MW16BAFB-708 WT TR
• Description: IC PSRAM 16MBIT 70NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 34:
Table 27:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Symbol
DQ[15:0]
t
t
t
t
t
t
LB#/UB#
ACLK
BOE
CBPH
CEM
CLK
CSP
A[20:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IL
IH
IL
IL
IH
IL
IL
IH
IL
IH
IL
OH
OL
OH
OL
High-Z
Burst READ Timing Parameters – Burst Suspend
READ Burst Suspend
Min
12.5
4.5
t
t
CSP
5
SP
ADDRESS
t
t
SP
SP
VALID
t
SP
-708
t
t
t
t
HD
HD
HD
Notes: 1. Non-default BCR settings for READ burst suspend: Latency code two (three clocks); WAIT
HD
High-Z
Max
20
20
20
9
8
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
2. Clock rates below 50 MHz (
t
OLZ
t
ACLK
active LOW; WAIT asserted during delay.
Min
t
15
t
BOE
5
5
-706/-856
CLK
OUTPUT
VALID
Max
11
20
20
20
8
t
KOH
OUTPUT
VALID
Units
ns
ns
ns
µs
ns
ns
OUTPUT
VALID
t
CEM
t
43
CLK > 20ns) are allowed as long as
Symbol
t
t
t
t
t
t
OUTPUT
HD
HZ
KOH
OHZ
OLZ
SP
VALID
t
OHZ
Maximum and Typical Standby Currents
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
t
OLZ
2
2
5
3
-708
t
BOE
Max
8
8
OUTPUT
VALID
©2003 Micron Technology, Inc. All rights reserved.
t
CSP specifications are met.
Min
DON’T CARE
-706/-856
2
2
5
3
OUTPUT
VALID
Max
t
t
OHZ
8
8
t
HZ
CBPH
High-Z
UNDEFINED
ADDRESS
VALID
Units
ns
ns
ns
ns
ns
ns