MT45W1MW16BAFB-708 WT TR Micron Technology Inc, MT45W1MW16BAFB-708 WT TR Datasheet - Page 8

IC PSRAM 16MBIT 70NS 54FBGA

MT45W1MW16BAFB-708 WT TR

Manufacturer Part Number
MT45W1MW16BAFB-708 WT TR
Description
IC PSRAM 16MBIT 70NS 54FBGA
Manufacturer
Micron Technology Inc

Specifications of MT45W1MW16BAFB-708 WT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Part-Numbering Information
Figure 3:
Valid Part Number Combinations
Device Marking
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Micron Technology
Product Family
45 = PSRAM/CellularRAM Memory
Operating Core Voltage
W = 1.70V–1.95V
Address Locations
M = Megabits
Operating Voltage
W = 1.70V–3.30V
Bus Configuration
16 = x16
READ/WRITE Operation Mode
BA = Asynchronous/Page/Burst
Part Number Chart
Package Codes
FB = VFBGA (6 x 9 grid, 0.75mm pitch, 6.0mm x 8.0mm x 1.0mm) 54-ball
BB = Lead-free VFBGA (6 x 9 grid, 0.75mm pitch, 6.0mm x 8.0mm x 1.0mm) 54-ball (contact factory)
Notes: 1. -30°C exceeds the CellularRAM Work Group 1.0 specification of -25°C.
Micron CellularRAM devices are available in several different configurations and densi-
ties (see Figure 3).
After building the part number from the part numbering chart above, please go to the
Micron Part Marking Decoder Web site at
that the part number is offered and valid. If the device required is not on this list, please
contact the factory.
Due to the size of the package, the Micron standard part number is not printed on the
top of the device. Instead, an abbreviated device mark comprised of a five-digit alphanu-
meric code is used. The abbreviated device marks are cross-referenced to the Micron
part numbers at http://www.micron.com/partsearch. To view the location of the abbre-
viated mark on the device, please refer to customer service note, CSN-11, “Product
Mark/Label” at http://www.micron.com/csn.
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
MT 45 W 2M W 16 BA
FB -70
8
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
L
http://www.micron.com/partsearch
WT ES
Part-Numbering Information
Production Status
Blank = Production
ES = Engineering Sample
MS = Mechanical Sample
Operating Temperature
WT = -30°C to +85°C (see Note 1)
IT = -40° to +85°C (contact factory)
Standby Power Options
Blank = Standard
L = Low Power
Frequency
6 = 66 MHz
8 = 80 MHz
Access/Cycle Time
70 = 70ns
85 = 85ns
©2003 Micron Technology, Inc. All rights reserved.
to verify

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