MT45W1MW16BAFB-856 WT Micron Technology Inc, MT45W1MW16BAFB-856 WT Datasheet - Page 20

• Manufacturer Part Number: MT45W1MW16BAFB-856 WT
• Description: IC PSRAM 16MBIT 85NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-856 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 16:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Read Configuration Register
Notes: 1. WRITE on third cycle must be CE# controlled.
ADDRESS
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
LB#/UB#
2. CE# must be HIGH for 150ns before performing the cycle that reads a configuration regis-
DATA
WE#
OE#
ter.
CE#
ADDRESS
(MAX)
XXXXh
READ
ADDRESS
XXXXh
(MAX)
READ
20
RCR: 0000h
BCR: 0001h
ADDRESS
WRITE
(MAX)
1
NOTE 2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ADDRESS
(MAX)
READ
DON'T CARE
CR VALUE
OUT
Configuration Registers
©2003 Micron Technology, Inc. All rights reserved.