MT45W1MW16BAFB-856 WT Micron Technology Inc, MT45W1MW16BAFB-856 WT Datasheet - Page 30

• Manufacturer Part Number: MT45W1MW16BAFB-856 WT
• Description: IC PSRAM 16MBIT 85NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-856 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 12:
Figure 23:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
PAR
Full Array
1/2 Array
1/4 Array
1/8 Array
0 Array
75
65
55
45
35
25
15
-30
-20
Maximum Standby Currents for Applying PAR and TCR Settings – 16Mb
Typical Refresh Current vs. Temperature (I
-10
Notes: 1. For RCR[6:5] = 00b (default) refer to Figure 24 on page 31 for typical values.
Note:
0
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
2. In order to achieve low standby current, all inputs must be driven to V
3. TCR values for 85°C are 100 percent tested. TCR values for 15°C and 45°C are sampled only.
be slightly higher for up to 500ms after power-up, or after changes to the PAR array por-
tion.
Typical I
sensor enabled.
10
Temperature (°C)
+15°C (RCR[6:5] = 10b)
SB
20
currents for each PAR setting with the appropriate TCR selected, or temperature
30
40
38
38
38
35
40
30
50
TCR
Maximum and Typical Standby Currents
+45°C (RCR[6:5] = 01b)
60
) – 32Mb
Micron Technology, Inc., reserves the right to change products or specifications without notice.
70
TCR
50
55
55
55
40
80
90
©2003 Micron Technology, Inc. All rights reserved.
+85°C (RCR[6:5] = 11b)
PAR = Full and 1/2 Array
None
PAR = 1/4 Array
PAR = 1/8 Array
CC
Q or V
80
70
70
70
65
SS
. I
SB
might