MT45W1MW16BAFB-856 WT Micron Technology Inc, MT45W1MW16BAFB-856 WT Datasheet - Page 32

IC PSRAM 16MBIT 85NS 54FBGA

MT45W1MW16BAFB-856 WT

Manufacturer Part Number
MT45W1MW16BAFB-856 WT
Description
IC PSRAM 16MBIT 85NS 54FBGA
Manufacturer
Micron Technology Inc

Specifications of MT45W1MW16BAFB-856 WT

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 14:
Figure 25:
Figure 26:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Description
Input Capacitance
Input/Output Capacitance (DQ)
Capacitance
AC Input/Output Reference Waveform
Output Load Circuit
Table 15:
Notes: 1. These parameters are verified in device characterization and are not 100% tested.
Notes: 1. AC test inputs are driven at V
Note:
Input
Output Load Circuit
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
2. Input timing begins at V
3. Output timing ends at V
DUT
V
V
CC
times (10% to 90%) < 1.6ns.
the input test point may not be shown to scale.
All tests are performed with the outputs configured for full drive strength (BCR[5] = 0).
SS
1
Q
Q
T
C
= +25ºC; f = 1 MHz;
Conditions
V
V
1.80V
2.50V
3.00V
CC
V
CC
/2
IN
30pF
Q
2
= 0V
VccQ
R1
R2
CC
CC
Test Point
/2. Due to the possibility of a difference between V
Q/2.
32
Symbol
CC
Q for a logic 1 and V
C
C
Test Points
IO
IN
Maximum and Typical Standby Currents
R1/R2
2.7KΩ
3.7KΩ
4.5KΩ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
2.0
3.0
SS
Q for a logic 0. Input rise and fall
V
Max
6.5
6.5
CC
Q/2
©2003 Micron Technology, Inc. All rights reserved.
3
Output
Units
pF
pF
CC
and V
Notes
1
1
CC
Q,

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