MT45W1MW16BAFB-856 WT TR Micron Technology Inc, MT45W1MW16BAFB-856 WT TR Datasheet - Page 40

• Manufacturer Part Number: MT45W1MW16BAFB-856 WT TR
• Description: IC PSRAM 16MBIT 85NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-856 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 31:
Table 24:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Symbol
t
t
t
t
t
t
t
t
DQ[15:0]
ABA
ACLK
BOE
CEM
CEW
CLK
CSP
HD
LB#/UB#
A[20:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
OL
IH
IH
IL
OH
OL
OH
Burst READ Timing Parameters – Single Access
Single-Access Burst READ Operation
Min
12.5
4.5
1
2
High-Z
-708
READ Burst Identified
Notes: 1. Non-default BCR settings for single-access burst READ operation: Latency code two (three
t
ADDRESS
t
SP
CSP
t
(WE# = HIGH)
t
VALID
SP
t
SP
Max
t
SP
46.5
CEW
7.5
20
20
20
9
8
t
HD
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
2. Clock rates below 50 MHz (
t
t
HD
HD
t
HD
High-Z
clocks); WAIT active LOW; WAIT asserted during delay.
Min
15
1
5
2
-706/-856
t
ABA
t
CEM
Max
7.5
56
11
20
20
20
8
t
ACLK
t
OLZ
t
BOE
Units
ns
ns
ns
µs
ns
ns
ns
ns
t
KHTL
t
CLK
OUTPUT
t
t
40
VALID
HD
CLK > 20ns) are allowed as long as
Symbol
t
t
t
t
t
t
t
t
t
HZ
KHKL
KHTL
KOH
KP
OHZ
OLZ
SP
KOH
Maximum and Typical Standby Currents
t
OHZ
t
HZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
KP
Min
2
4
5
3
-708
Max
1.8
8
9
8
High-Z
DON’T CARE
©2003 Micron Technology, Inc. All rights reserved.
t
CSP specifications are met.
t
Min
KP
2
5
5
3
-706/-856
Max
2.0
11
8
8
t
KHKL
UNDEFINED
Units
ns
ns
ns
ns
ns
ns
ns
ns