MT45W1MW16BAFB-856 WT TR Micron Technology Inc, MT45W1MW16BAFB-856 WT TR Datasheet - Page 45

• Manufacturer Part Number: MT45W1MW16BAFB-856 WT TR
• Description: IC PSRAM 16MBIT 85NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-856 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 36:
Table 29:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Symbol
t
t
t
t
t
t
t
t
AS
AW
BW
CEW
CPH
CW
DH
DW
Asynchronous WRITE Timing Parameters – CE#-Controlled
CE#-Controlled Asynchronous WRITE
Min
70
70
70
23
0
1
5
0
-70x
Max
DQ[15:0]
DQ[15:0]
7.5
LB#/UB#
A[20:0]
ADV#
WAIT
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
WE#
OUT
OE#
CE#
IN
Min
85
85
85
23
0
1
5
0
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IH
IH
IH
IH
IH
OH
IH
IL
IL
IL
IL
IL
IL
OL
IL
-856
Max
7.5
t AS
High-Z
t LZ
t WPH
t CEW
High-Z
Units
νσ
ns
ns
ns
ns
ns
ns
ns
t WHZ
VALID ADDRESS
45
t AW
t CW
t WC
t BW
Symbol
t
t
t
t
t
t
t
HZ
LZ
WC
WHZ
WP
WPH
WR
Maximum and Typical Standby Currents
t WP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID INPUT
t DW
t HZ
Min
10
70
46
10
0
t WR
t DH
-70x
DON’T CARE
t CPH
High-Z
Max
8
8
©2003 Micron Technology, Inc. All rights reserved.
Min
10
85
55
10
0
-856
Max
8
8
Units
ns
ns
ns
ns
ns
ns
ns