MT45W1MW16BAFB-856 WT TR Micron Technology Inc, MT45W1MW16BAFB-856 WT TR Datasheet - Page 52

IC PSRAM 16MBIT 85NS 54FBGA

MT45W1MW16BAFB-856 WT TR

Manufacturer Part Number
MT45W1MW16BAFB-856 WT TR
Description
IC PSRAM 16MBIT 85NS 54FBGA
Manufacturer
Micron Technology Inc

Specifications of MT45W1MW16BAFB-856 WT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
85ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 43:
Table 37:
Table 38:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AS
AVH
AVS
AW
BW
CKA
CVS
CW
DH
ABA
ACLK
BOE
CBPH
CEW
CLK
DQ[15:0]
LB#/UB#
A[20:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL
OH
OL
IH
IL
IH
IL
IH
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
WRITE Timing Parameters – Async WRITE Followed by Burst READ
READ Timing Parameters – Async WRITE Followed by Burst READ
Asynchronous WRITE Followed by Burst READ
t VPH
Min
12.5
High-Z
Min
t WHZ
10
70
70
70
10
70
5
1
VALID ADDRESS
0
5
0
t AS
t AVS
t CVS
-708
t VP
t CW
-70x
t WC
Notes: 1. Non-default BCR settings for asynchronous WRITE followed by burst READ: Latency code
t WP
DATA
Max
46.5
t AVH
Max
7.5
20
20
t DH
9
t WPH
t WC
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
3. Clock rates below 50 MHz (
VALID ADDRESS
t AW
t BW
t VS
two (three clocks); WAIT active LOW; WAIT asserted during delay.
vided every
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns. Note that CellularRAM
Work Group specification 1.0 requires CE# to be clocked HIGH to terminate the burst.
t AS
Min
t DW
DATA
15
t WC
Min
-706/-856
5
1
10
85
85
85
10
85
0
5
0
t WR
-856
Max
7.5
56
11
20
20
Max
t CKA
t
t CBPH
CEM. A refresh opportunity is satisfied by either of the following two condi-
2
Units
Units
t CSP
V
V
ns
ns
ns
ns
ns
ns
t SP
t CEW
t SP
ADDRESS
OH
OL
ns
ns
ns
ns
ns
ns
ns
ns
ns
t SP
t SP t HD
VALID
t HD
t HD
t HD
t CLK
High-Z
t
52
CLK > 20ns) are allowed as long as
t ABA
Symbol
t
t
t
t
t
t
t
t
t
DW
VP
VPH
VS
WC
WHZ
WP
WPH
WR
Symbol
t
t
t
t
t
Maximum and Typical Standby Currents
CSP
HD
KOH
OHZ
SP
t ACLK
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t BOE
OUTPUT
VALID
Min
t KOH
Min
20
10
10
70
70
46
10
4.5
0
2
2
3
-70x
-708
OUTPUT
VALID
Max
Max
20
8
8
DON’T CARE
OUTPUT
©2003 Micron Technology, Inc. All rights reserved.
t
VALID
CSP specifications are met.
Min
Min
23
10
10
85
85
55
10
-706/-856
5
2
2
3
0
-856
OUTPUT
VALID
Max
Max
20
8
8
t OHZ
UNDEFINED
High-Z
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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