MT45W1MW16BAFB-856 WT TR Micron Technology Inc, MT45W1MW16BAFB-856 WT TR Datasheet - Page 7

• Manufacturer Part Number: MT45W1MW16BAFB-856 WT TR
• Description: IC PSRAM 16MBIT 85NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-856 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 2:
Table 3:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Mode
Mode
Read
Write
Standby
No Operation
Configuration
Register
DPD
Async Read
Async Write
Standby
No Operation
Initial Burst
Read
Initial Burst
Write
Burst
Continue
Burst Suspend
Configuration
Register
DPD
Bus Operations – Asynchronous Mode
Bus Operations – Burst Mode
Power-Down
Power-Down
Standby
Standby
Power
Power
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Deep
Deep
Notes: 1. CLK must be LOW during async read and async write modes and to achieve standby power
Idle
Idle
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
2. The WAIT polarity is configured through the bus configuration register (BCR[10]).
3. When LB# and UB# are in select mode (LOW), DQ[15:0] are affected. When only LB# is in
4. The device will consume active power in this mode whenever addresses are changed.
5. When the device is in standby mode, address inputs and data inputs/outputs are internally
6. V
7. DPD is maintained until RCR is reconfigured.
8. Burst mode operation is initialized through the bus configuration register (BCR[15]).
during standby and DPD modes. CLK must be static (HIGH or LOW) during burst suspend.
select mode, DQ[7:0] are affected. When only UB# is in the select mode, DQ[15:8] are
affected.
isolated from any external influence.
current.
IN
CLK
CLK
= V
X
L
L
L
L
L
L
L
L
L
L
L
CC
1
1
Q or 0V; all device balls must be static (unswitched) in order to achieve standby
ADV#
ADV#
X
X
X
X
X
H
X
X
L
L
L
L
L
L
L
L
CE#
CE#
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
7
OE#
OE#
X
X
H
X
X
X
X
X
X
H
X
H
H
X
L
L
WE#
WE#
Micron Technology, Inc., reserves the right to change products or specifications without notice.
H
X
X
X
H
X
X
H
X
X
X
L
L
L
L
L
CRE
CRE
H
X
H
L
L
L
L
X
X
L
L
L
L
L
L
L
LB#/
UB#
LB#/
UB#
X
X
X
X
L
L
X
X
X
X
X
X
L
L
L
L
WAIT
High-Z
High-Z
Low-Z
Low-Z
Low-Z
Low-Z
WAIT
High-Z
High-Z
Low-Z
Low-Z
Low-Z
Low-Z
Low-Z
Low-Z
Low-Z
Low-Z
General Description
©2003 Micron Technology, Inc. All rights reserved.
2
2
DQ[15:0]
DQ[15:0]
Data-In or
Data-Out
Data-Out
Data-Out
Data-Out
Data-In
Data-In
Data-In
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
X
X
3
3
Notes
Notes
5, 6
4, 6
5, 6
4, 6
4, 8
4, 8
4, 8
4, 8
4
4
7
4
4
8
7