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MT48V8M16LFB4-10:G
MT48V8M16LFB4-10:G | |
|---|---|
| Manufacturer Part Number | MT48V8M16LFB4-10:G |
| Description | IC SDRAM 128MBIT 100MHZ 54VFBGA |
| Manufacturer | Micron Technology Inc |
| MT48V8M16LFB4-10:G datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of MT48V8M16LFB4-10:G | |||
|---|---|---|---|
| Format - Memory | RAM | Memory Type | Mobile SDRAM |
| Memory Size | 128M (8Mx16) | Speed | 100MHz |
| Interface | Parallel | Voltage - Supply | 2.3 V ~ 2.7 V |
| Operating Temperature | 0°C ~ 70°C | Package / Case | 54-VFBGA |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | ||
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Table 19:
I
Specifications and Conditions (x16)
DD
Notes 1, 3, 6, 11, 13, 31 apply to entire table; notes appear on page 57; V
V
Q = 2.5V ±0.2V or V
DD
Parameter/Condition
Operating current: Active mode; Burst = 2; READ or WRITE;
t
t
RC =
RC (MIN)
Standby current: Power-down mode; All banks idle;
CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
t
banks active after
RCD met; No accesses in progress
Operating current: Burst mode; Page burst; READ or WRITE;
All banks active
Auto refresh current: CKE = HIGH;
CS# = HIGH
Table 20:
I
7 Self Refresh Current Options (x16)
DD
Note 4 applies to entire table; note appears on page 57; V
±0.2V or V
= +2.5V ±0.2V, V
DD
Temperature-Compensated Self Refresh (TCSR)
Parameter/Condition
Self refresh current: CKE < 0.2V (E4 = 1, E3 = 1)
Self refresh current: CKE < 0.2V (E4 = 0, E3 = 0)
Self refresh current: CKE < 0.2V (E4 = 0, E3 = 1)
Self refresh current: CKE < 0.2V (E4 = 1, E3 = 0)
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
= +2.5V ±0.2V, V
Q = +1.8V ±0.15V
DD
DD
Symbol
I
DD1
I
DD2
I
DD3
I
DD4
t
t
RFC =
RFC (MIN)
I
DD5
t
RFC = 15.625µs
I
DD6
t
RFC = 3.906µs(AT)
I
DD6
DD
Q = +1.8V ±0.15V
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
55
128Mb: x16, x32 Mobile SDRAM
Electrical Specifications
= V
Q = +3.3V ±0.3V or V
DD
DD
Max
-75M
-8
-10
Units
130
130
100
mA
450
450
450
µA
40
40
35
mA
115
100
95
mA
225
210
170
mA
3
3
3
mA
6
6
6
mA
= V
Q = +3.3V ±0.3V or V
= V
DD
DD
DD
Max
Temperature
-75M/-8/-10
85ºC
800
70ºC
500
45ºC
350
15ºC
300
©2001 Micron Technology, Inc. All rights reserved.
=
DD
Notes
18, 19
12, 33
19
18, 19
12, 18,
19, 32,
33
Q = 2.5V
Units
µA
µA
µA
µA
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