MT29F8G08FACWP:C TR Micron Technology Inc, MT29F8G08FACWP:C TR Datasheet - Page 19

• Manufacturer Part Number: MT29F8G08FACWP:C TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08FACWP:C TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Figure 13:
Table 8:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. D 12/06 EN
CLE
H
H
X
X
X
X
L
L
L
L
L
Mode Selection
I
OL
ALE
H
H
X
X
X
X
L
L
L
L
L
vs. Rp
Notes: 1. WP# should be biased to CMOS HIGH or LOW for standby.
T (µs)
CE#
2. H = Logic level HIGH; L = Logic level LOW; X = V
X
X
X
H
L
L
L
L
L
L
L
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
0
WE#
H
H
X
X
X
X
2,000
RE#
4,000
H
H
H
H
H
H
X
X
X
X
19
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
Rp (Ω)
0V/V
6,000
WP#
X
X
H
H
H
X
X
H
H
L
CC
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Mode
Read mode
Write mode
Data input
Sequential read and data output
During read (busy)
During program (busy)
During erase (busy)
Write protect
Standby
8,000
IH
or V
I
I
10,000
OL
OL
at 3.60V (mA)
at 1.95V (mA)
IL
.
12,000
©2005 Micron Technology, Inc. All rights reserved.
Command input
Address input
Command input
Address input
Bus Operation