MT29F8G08FACWP:C TR Micron Technology Inc, MT29F8G08FACWP:C TR Datasheet - Page 38

• Manufacturer Part Number: MT29F8G08FACWP:C TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08FACWP:C TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Figure 32:
Error Management
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. D 12/06 EN
PROGRAM Disable
WE#
WP#
Micron NAND Flash devices are specified to have a minimum of 2,008 (N
out of every 2,048 total available blocks. This means the devices may have blocks that are
invalid when they are shipped. An invalid block is one that contains 1 or more bad bits.
Additional bad blocks may develop with use. However, the total number of available
blocks will not fall below N
Although NAND Flash memory devices may contain bad blocks, they can be used quite
reliably in systems that provide bad-block mapping, bad-block replacement, and error
correction algorithms. This type of software environment ensures data integrity.
Internal circuitry isolates each block from other blocks, so the presence of a bad block
does not affect the operation of the rest of the Flash device.
The first block (physical block address 00h) for each CE# is guaranteed to be free of
defects (up to 1,000 PROGRAM/ERASE cycles) when shipped from the factory. This pro-
vides a reliable location for storing boot code and critical boot information.
Before NAND Flash devices are shipped from Micron, they are erased. The factory iden-
tifies invalid blocks before shipping by programming data other than FFh (x8) or FFFFh
(x16) into the first spare location (column address 2,048 for x8 devices, or column
address 1,024 for x16 devices) of the first or second page of each bad block.
System software should check the first spare address on the first 2 pages of each block
prior to performing any erase or programming operations on the NAND Flash device. A
bad-block table can then be created, allowing system software to map around these
areas. Factory testing is performed under worst-case conditions. Because blocks marked
“bad” may be marginal, it may not be possible to recover this information if the block is
erased.
Over time, some memory locations may fail to program or erase properly. In order to
ensure that data is stored properly over the life of the NAND Flash device, certain pre-
cautions must be taken:
• Always check status after a PROGRAM, ERASE, or DATA MOVE operation.
• Under typical conditions, use a minimum of 1-bit ECC per 528 bytes of data.
• Use a bad-block replacement algorithm.
R/B#
I/Ox
t WW
80h
VB
38
during the endurance life of the product.
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
10h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
Error Management
VB
) valid blocks