MT29F8G08FACWP:C TR Micron Technology Inc, MT29F8G08FACWP:C TR Datasheet - Page 42

• Manufacturer Part Number: MT29F8G08FACWP:C TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08FACWP:C TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Table 18:
Table 19:
Table 20:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. D 12/06 EN
Description
Parameter
Parameter
Input capacitance
Input/output capacitance (I/O)
Input pulse levels
Input rise and fall times
Input and output timing levels
Output load
ALE to data start
ALE hold time
ALE setup time
CE# hold time
CLE hold time
CLE setup time
CE# setup time
Data hold time
Data setup time
WRITE cycle time
WE# pulse width HIGH
WE# pulse width
WP# setup time
Capacitance
Test Conditions
AC Characteristics: Command, Data, and Address Input
Notes: 1. These parameters are verified in device characterization and are not 100 percent tested.
Notes: 1. Verified in device characterization; not 100 percent tested.
Notes: 1. Timing for
MT29FxGxxxAC
MT29FxGxxxBC
MT29FxGxxxAC (V
MT29FxGxxxAC (V
MT29FxGxxxBC (V
2. Test conditions: T
2. For PAGE READ CACHE MODE and PROGRAM PAGE CACHE MODE operations, the 3V x16
3. For 1.8V devices: During PROGRAM PAGE CACHE MODE and PAGE READ CACHE MODE
with the first rising edge of WE# for data input.
AC characteristics apply for 3V x8 devices.
operations, when V
Symbol
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
ADL
ALH
ALS
CH
CLH
CLS
CS
DH
DS
WC
WH
WP
WW
C
C
IN
IO
t
ADL begins in the ADDRESS cycle, on the final rising edge of WE#, and ends
CC
CC
CC
= 1.70–1.95V)
C
= 3.0V ±10%)
= 3.3V ±10%)
MT29F2GxxAxC
MT29F2GxxAxC
MT29F4GxxBxC
MT29F8GxxFxC
MT29F4GxxBxC
MT29F8GxxFxC
= 25°C; f = 1 MHz; V
CC
Device
= 1.70V,
3V x16 and 1.8V
Min
100
10
25
10
10
25
35
10
20
45
15
25
30
42
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
t
WC = 55ns MIN.
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
= 0V.
1 TTL GATE and CL = 100pF
0.0V to V
1 TTL GATE and CL = 50pF
1 TTL GATE and CL = 30pF
0.0V to V
Min
100
Max
10
10
15
10
30
10
15
30
10
20
40
10
20
40
5
5
5
5
3V x8
CC
Value
V
CC
Electrical Characteristics
5ns
CC
(1.70V–1.95V)
(2.7V–3.6V)
/2
Max
©2005 Micron Technology, Inc. All rights reserved.
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Notes
1, 2
1, 2
Notes
1
1
1
2, 3
1
2
2
2
2
2
2
2
2
2
2