MT29F8G08FACWP:C TR Micron Technology Inc, MT29F8G08FACWP:C TR Datasheet - Page 43

• Manufacturer Part Number: MT29F8G08FACWP:C TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08FACWP:C TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Table 21:
Table 22:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. D 12/06 EN
Parameter
Parameter Symbol
ALE to RE# delay
CE# access time
CE# HIGH to output High-Z
CLE to RE# delay
Cache busy in PAGE READ
CACHE MODE (first 31h)
Cache busy in PAGE READ
CACHE MODE (next 31h and
3Fh)
Output High-Z to RE# LOW
Data output hold time
Data transfer from NAND Flash
array to data register
READ cycle time
RE# access time
RE# HIGH hold time
RE# HIGH to output High-Z
RE# pulse width
Ready to RE# LOW
Reset time
(READ/PROGRAM/ERASE)
WE# HIGH to busy
WE# HIGH to RE# LOW
NOP
t
t
t
t
BERS
CBSY
LPROG
PROG
AC Characteristics: Normal Operation
PROGRAM/ERASE Characteristics
Notes: 1. For PAGE READ CACHE MODE and PROGRAM PAGE CACHE MODE operations, the 3V
Notes: 1. Eight cycles total to the same page.
Description
Number of partial page programs
Block erase time
Busy time for cache program
Last page program time
Page program time
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
3. If RESET (FFh) command is loaded at ready state, the device goes busy for maximum 5µs.
4. Do not issue a new command during
2.
3.
x16 AC characteristics apply for 3V x8 devices.
sampled and not 100 percent tested.
t
t
address load time (last page) – data load time (last page).
CBSY MAX time depends on timing between internal program completion and data in.
LPROG =
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AR
CEA
CHZ
CLR
DCBSYR1
DCBSYR2
IR
OH
R
RC
REA
REH
RHZ
RP
RR
RST
WB
WHR
t
PROG (last page) +
t
DCBSYR1
3V x16 and 1.8V
Min
10
10
15
50
15
25
20
80
0
–
–
–
–
–
–
–
–
43
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
t
PROG (last - 1 page) - command load time (last page) -
5/10/500
Max
150
45
45
25
25
30
30
3
–
–
–
–
–
–
–
–
–
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WB, even if R/B# is ready.
t
DCBSYR1
Min
Typ
300
10
10
15
30
10
15
20
60
–
–
–
0
–
–
–
–
–
2
3
–
–
3V x8
Electrical Characteristics
5/10/500
Max
Max
150
700
700
23
20
25
25
18
30
–
3
–
–
–
–
–
–
–
8
3
–
©2005 Micron Technology, Inc. All rights reserved.
cycles
Unit
Unit
ms
ns
ns
ns
ns
µs
µs
ns
ns
µs
ns
ns
ns
ns
ns
ns
µs
ns
ns
µs
µs
–
Notes
Notes
3, 4
1
2
1
1
1
1
2
1
3
1
2
3