MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 17

• Manufacturer Part Number: MT29F8G08BAAWP:A TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08BAAWP:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Figure 8:
Figure 9:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
READY/BUSY# Open Drain
t
Fall and
Notes:
t
Rise
Where Σ
The minimum value for Rp is determined by the output drive capability of the R/B#
signal, the output voltage swing, and V
V
1.
2.
3.
4. See TC values in Figure 11 on page 18 for approximate Rp value and TC.
GND
V
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
t
t
t
CC
Fall and
Rise is primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 10ns at 3.3V.
Rp MIN 3.3V part
–1
(
IL
is the sum of the input currents of all devices tied to the R/B# pin.
I
OL
,
t
0
Rise calculated at 10 percent and 90 percent points.
Device
2
t Fall t Rise
)
R/B#
Open drain output
=
4
V
---------------------------------------------------------------
Rp
CC
TC
(
MAX
0
17
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
I
OL
) V
+
–
2
Σ
OL
IL
CC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(
4
MAX
.
Vcc 3.3
)
6
=
------------------------- -
8mA
3.2V
+
Σ
IL
©2006 Micron Technology, Inc. All rights reserved.
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