MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 52

• Manufacturer Part Number: MT29F8G08BAAWP:A TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08BAAWP:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Interleaved TWO-PLANE PROGRAM PAGE CACHE MODE Operations
Figure 41:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
80h
Interleaved TWO-PLANE PROGRAM PAGE CACHE MODE Operation with R/B# Monitoring
Address
Die 1
1
Data
Figures 41 and 42 show how to perform two types of interleaved TWO-PLANE
PROGRAM PAGE CACHE MODE operations. In Figure 41, the R/B# signal is monitored.
In Figure 42 on page 53, the status register is monitored with the TWO-
PLANE/MULTIPLE-DIE READ STATUS (78h) command.
The interleaved TWO-PLANE PROGRAM PAGE CACHE MODE operation must meet
two-plane addressing requirements. See “Two-Plane Addressing” on page 35 for details.
RANDOM DATA INPUT (85h) is permitted during interleaved TWO-PLANE PROGRAM
PAGE CACHE MODE operations.
11h
(or 81h)
80h
Address
Die 1
Data
15h
80h
52
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Address
Die 1
80h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Data
Address
Die 2
11h
Data
(or 81h)
11h
80h
(or 81h)
Address
Command Definitions
Die 1
80h
©2006 Micron Technology, Inc. All rights reserved.
Address
Die 2
Data
15h
Data
15h
1