MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 59

• Manufacturer Part Number: MT29F8G08BAAWP:A TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08BAAWP:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Electrical Characteristics
Table 11:
Table 12:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
Parameter/Condition
Parameter/Condition
Voltage input
V
Storage temperature
Short circuit output current, I/Os
Operating temperature
V
Ground supply voltage
CC
CC
supply voltage
supply voltage
Absolute Maximum Ratings
Voltage on any pin relative to V
Recommended Operating Conditions
Stresses greater than those listed in Table 11 may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is
not guaranteed. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
MT29FxG08xAA
MT29FxG08xAA
Commercial
Extended
MT29FxG08xAA
SS
59
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Symbol
Vcc
Vss
T
A
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
T
V
V
STG
CC
IN
Min
–40
2.7
0
0
Min
–0.6
–0.6
–65
Electrical Characteristics
–
Typ
3.3
0
–
–
©2006 Micron Technology, Inc. All rights reserved.
Max
+150
+4.6
+4.6
5
Max
+70
+85
3.6
0
Unit
mA
°C
V
V
Unit
o
V
V
C