MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 60

• Manufacturer Part Number: MT29F8G08BAAWP:A TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08BAAWP:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

V
Figure 52:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
CC
Power Cycling
AC Waveforms During Power Transitions
Micron NAND Flash devices are designed to prevent data corruption during power tran-
sitions. V
PROGRAM and ERASE functions are disabled. WP# provides additional hardware
protection. WP# should be kept at V
10µs should be allowed for the NAND Flash to initialize before executing any commands
(see Figure 52).
The RESET command must be issued to all CE#s after power-on. The device will be busy
for a maximum of 1ms.
WP#
WE#
R/B#
I/Ox
CLE
V
CC
3V device: ≈ 2.5V
CC
is internally monitored. When V
HIGH
10µs
60
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
FFh
IL
during power cycling. When V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(MAX)
1ms
CC
goes below approximately 2.0V,
Don’t Care
Electrical Characteristics
3V device: ≈ 2.5V
©2006 Micron Technology, Inc. All rights reserved.
CC
Undefined
reaches 2.5V,