MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 61

• Manufacturer Part Number: MT29F8G08BAAWP:A TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08BAAWP:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Table 13:
Table 14:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
Parameter
Parameter
Sequential read current
Program current
Erase current
Standby current (TTL)
Standby current (CMOS)
Input leakage current
Output leakage current
Input high voltage
Input low voltage (all inputs)
Output high voltage
Output low voltage
Output low current (R/B#)
Valid block number
MT29F4G08AAA
MT29F8G08BAA
MT29F8G08DAA
MT29F16G08FAA
MT29F4G08AAA
MT29F8G08BAA
MT29F8G08DAA
MT29F16G08FAA
MT29F4G08AAA
MT29F8G08BAA
MT29F8G08DAA
MT29F16G08FAA
M29FxGxxxAA 3V Device DC and Operating Characteristics
Valid Blocks
Notes:
1. Invalid blocks are blocks that contain one or more bad bits. The device may contain bad
2. Block 00h (the first block) is guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles.
3. Each 4Gb section has a maximum of 80 invalid blocks.
blocks upon shipment. Additional bad blocks may develop over time; however, the total
number of available blocks will not drop below N
Do not erase or program blocks marked invalid by the factory.
CE#, CLE, ALE, WE#, RE#, WP#, R/B#
Symbol
N
VB
CE# = V
t
RC = 25ns; CE# = V
V
CE# = V
V
OUT
WP# = 0V/V
I
IN
Conditions
OH
I
I
OL
V
OUT
IH
I/O[7:0],
= 0V to V
OL
; WP# = 0V/V
= 0V to V
= –400µA
= 2.1mA
MT29F16G08FAA
= 0.4V
MT29F4G08AAA
MT29F8G08DAA
= 0mA
MT29F8G08BAA
CC
–
–
–
- 0.2V;
Device
CC
CC
CC
IL
61
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
;
CC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
Symbol
OL
16,064
I
I
I
V
I
I
V
V
4,016
8,032
8,032
CC
CC
CC
I
V
SB
SB
(R/B#)
I
Min
LO
OH
LI
OL
IH
IL
1
2
3
1
2
VB
during the endurance life of the device.
0.8 x V
Min
–0.3
2.4
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
8
16,384
4,096
8,192
8,192
Max
Electrical Characteristics
CC
©2006 Micron Technology, Inc. All rights reserved.
Typ
25
25
25
10
20
20
40
10
–
–
–
–
–
–
–
–
–
–
–
–
–
blocks
Unit
V
0.2 x Vcc
CC
Max
±10
±20
±20
±40
±10
±20
±20
±40
100
100
200
0.4
35
35
35
50
1
–
–
+ 0.3
Notes
1, 2
3
3
3
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V