MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 8

• Manufacturer Part Number: MT29F8G08BAAWP:A TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08BAAWP:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

General Description
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
NAND Flash technology provides a cost-effective solution for applications requiring
high-density, solid-state storage. The MT29F4G08AAA is a 4Gb NAND Flash memory
device. The MT29F8G08BAA is a two-die stack that operates as a single 8Gb device. The
MT29F8G08DAA is a two-die stack that operates as two independent 4Gb devices. The
MT29F16G08FAA is a four-die stack that operates as two independent 8Gb devices,
providing a total storage capacity of 16Gb in a single, space-saving package. Micron
NAND Flash devices include standard NAND Flash features as well as new features
designed to enhance system-level performance.
Micron NAND Flash devices use a highly multiplexed 8-bit bus (I/O[7:0]) to transfer
data, addresses, and instructions. The five command pins (CLE, ALE, CE#, RE#, WE#)
implement the NAND Flash command bus interface protocol. Additional pins control
hardware write protection (WP#) and monitor device status (R/B#).
This hardware interface creates a low-pin-count device with a standard pinout that is
the same from one density to another, allowing future upgrades to higher densities
without board redesign.
The MT29F4G, MT29F8G, and MT29F16G devices contain two planes per die. Each
plane consists of 2,048 blocks. Each block is subdivided into 64 programmable pages.
Each page consists of 2,112 bytes. The pages are further divided into a 2,048-byte data
storage region with a separate 64-byte area. The 64-byte area is typically used for error
management functions.
The contents of each page can be programmed in 220µs (TYP), and an entire block can
be erased in 1.5ms (TYP). On-chip control logic automates PROGRAM and ERASE oper-
ations to maximize cycle endurance. PROGRAM/ERASE endurance is specified at
100,000 cycles with appropriate error correction code (ECC) and error management.
8
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2006 Micron Technology, Inc. All rights reserved.