MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 81

• Manufacturer Part Number: MT29F8G08BAAWP:A TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08BAAWP:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Revision History
Rev. B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2/07
Rev. A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8/06
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
• Page 1: Added MT29F8G08BAA to title, 8Gb (dual-die stack 1 CE#), 8Gb (dual-die
• Figure 2 on page 2: Added classification B: 2 die, 1 CE#, 1 RB#. Added extended
• “General Description” on page 8: Added MT29F8G08BAA to first paragraph; revised
• Figure 3 on page 9: Modified note 1.
• Figure 5 on page 12: Revised block information.
• Figure 7 on page 14: Added new part number information to figure title and note 2.
• Table 4 on page 14: Changed part numbers in title.
• Former Figure 8 on page 17, “Time Constants” and Figure 9 on page 17, “Minimum
• Table 8 on page 25: Added MT29F8G08BAA in bytes 1, 2, and 4, modified interleaved
• “Two-Plane Addressing” on page 35: Revised second bullet re BA18.
• “Error Management” on page 58: Modified second bullet.
• Table 12 on page 59: Added extended temperature.
• Tables 13 and 14 on page 61, Table 15 on page 62: Added MT29F8G08DAA.
• Table 19 on page 64: Changed
• Initial release.
stack 2 CE#) to density options, 2 die, 1 CE#, 1 RB# to configuration options. Added
extended temperature to options.
temperature and note to contact factory.
fourth paragraph.
Rp”: Converted to equation format.
operations description, added note 3, changed part number in note 2.
81
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
t
CBSY (MAX) and
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
PROG (MAX) to 600µs.
©2006 Micron Technology, Inc. All rights reserved.
Revision History