MT45W1MW16PDGA-70 WT TR Micron Technology Inc, MT45W1MW16PDGA-70 WT TR Datasheet - Page 22

• Manufacturer Part Number: MT45W1MW16PDGA-70 WT TR
• Description: IC PSRAM 16MBIT 70NS 48VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16PDGA-70 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 48-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1275-2; MT45W1MW16PDGA-70 WT TR

Table 9:
PDF: 09005aef81cadc83/Source:09005aef81c6edb4
16mb_asyncpage_cr1_0_p23z_2.fm - Rev. F 4/08 EN
Parameter
Address access time
Page access time
LB#/UB# access time
LB#/UB# disable to High-Z output
LB#/UB# enable to Low-Z output
Maximum CE# pulse width
Chip select access time
Chip disable to High-Z output
Chip enable to Low-Z output
Output enable to valid output
Output hold from address change
Output disable to High-Z output
Output enable to Low-Z output
Page cycle time
Read cycle time
READ Cycle Timing Requirements
Notes: 1. High-Z to Low-Z timings are tested with the circuit shown in Figure 15 on page 21. The
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 15 on page 21. The
3. Page mode enabled only.
Low-Z timings measure a 100mV transition away from the High-Z (V
either V
High-Z timings measure a 100mV transition from either V
OH
or V
16Mb: 1 Meg x 16 Async/Page CellularRAM 1.0 Memory
OL
.
22
Symbol
t
t
t
t
t
t
t
CEM
t
OHZ
APA
t
t
t
BHZ
t
OLZ
t
t
BLZ
t
AA
OH
BA
CO
HZ
OE
PC
RC
LZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
10
10
20
70
5
5
–70
Electrical Characteristics
OH
Max
70
20
70
70
20
8
8
8
8
or V
©2005 Micron Technology, Inc. All rights reserved.
OL
toward V
CC
Q/2) level toward
Units
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
2
1
3
2
1
2
1