MT45W1MW16PDGA-70 WT TR Micron Technology Inc, MT45W1MW16PDGA-70 WT TR Datasheet - Page 23

• Manufacturer Part Number: MT45W1MW16PDGA-70 WT TR
• Description: IC PSRAM 16MBIT 70NS 48VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16PDGA-70 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 48-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1275-2; MT45W1MW16PDGA-70 WT TR

Table 10:
Table 11:
Table 12:
PDF: 09005aef81cadc83/Source:09005aef81c6edb4
16mb_asyncpage_cr1_0_p23z_2.fm - Rev. F 4/08 EN
Parameter
Description
Description
Address setup time
Address valid to end of write
Byte select to end of write
CE# HIGH time during write
Chip enable to end of write
Data hold from write time
Data write setup time
Chip enable to Low-Z output
End write to Low-Z output
WRITE cycle time
WRITE to High-Z output
WRITE pulse width
WRITE pulse width HIGH
WRITE recovery time
Address setup time
Address valid to end of write
Chip deselect to ZZ# LOW
Chip enable to end of write
Write cycle time
Write pulse width
Write recovery time
ZZ# LOW to WE# LOW
Chip deselect to ZZ# LOW
Deep power-down recovery
Minimum ZZ# pulse width
WRITE Cycle Timing Requirements
Load Configuration Register Timing Requirements
Deep Power-Down Timing Requirements
Notes: 1. High-Z to Low-Z timings are tested with the circuit shown in Figure 15 on page 21. The
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 15 on page 21. The
3. WE# LOW time must be limited to
Low-Z timings measure a 100mV transition away from the High-Z (V
either V
High-Z timings measure a 100mV transition from either V
OH
or V
16Mb: 1 Meg x 16 Async/Page CellularRAM 1.0 Memory
OL
.
23
Symbol
t
t
t
t
t
CDZZ
R
ZZ (MIN)
t
t
t
t
WHZ
WPH
t
t
t
t
t
t
CPH
t
OW
AW
DW
t
BW
CW
WC
WP
WR
DH
AS
LZ
Symbol
Symbol
t
t
t
CEM (8µs).
ZZWE
CDZZ
t
t
t
t
t
t
AW
CW
WC
WR
WP
AS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
70
70
70
23
10
70
46
10
0
5
0
5
0
Min
–70
Min
150
10
70
70
70
40
10
5
0
5
0
Electrical Characteristics
OH
Max
–70
8
–70
or V
©2005 Micron Technology, Inc. All rights reserved.
OL
Max
Max
toward V
500
CC
Q/2) level toward
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Units
Units
Notes
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
1
1
2
3