CY7C1041BV33-12ZC Cypress Semiconductor Corp, CY7C1041BV33-12ZC Datasheet

IC SRAM 4MBIT 12NS 44TSOP

CY7C1041BV33-12ZC

Manufacturer Part Number
CY7C1041BV33-12ZC
Description
IC SRAM 4MBIT 12NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1041BV33-12ZC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
12ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1021
Cypress Semiconductor Corporation
Document #: 38-05168 Rev. **
Features
Functional Description
The CY7C1041BV33 is a high-performance CMOS Static
RAM organized as 262,144 words by 16 bits.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA) Comm’l
Maximum CMOS Standby
Current (mA)
• High speed
• Low active power
• Low CMOS standby power (Commercial L version)
• 2.0V Data Retention (600 W at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
A
A
A
A
A
A
A
A
A
Logic Block Diagram
0
1
2
3
4
5
6
7
8
— t
— 612 mW (max.)
— 1.8 mW (max.)
AA
= 12 ns
INPUT BUFFER
1024 x 4096
DECODER
COLUMN
256K x 16
ARRAY
Ind’l
Com’l/Ind’l
Com’l
0
L
through I/O
3901 North First Street
190
-12
0.5
12
8
-
7
), is
I/O
I/O
0
8
– I/O
– I/O
BHE
WE
CE
OE
BLE
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1041BV33 is available in a standard 44-pin
400-mil-wide body width SOJ and 44-pin TSOP II package
with center power and ground (revolutionary) pinout.
7
15
170
190
-15
0.5
15
8
17
San Jose
). If Byte High Enable (BHE) is LOW, then data
256K x 16 Static RAM
8
160
180
-17
0.5
17
through I/O
8
Pin Configuration
0
I/O
I/O
I/O
I/O
V
I/O
I/O
I/O
I/O
V
WE
CE
CC
A
A
A
A
A
A
A
A
A
A
SS
to I/O
9
0
1
2
3
4
0
1
2
3
4
5
6
7
5
6
7
8
0
CA 95134
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
10
11
12
Top View
through I/O
TSOP II
7
. If Byte High Enable (BHE) is
15
SOJ
Revised November 15, 2001
CY7C1041BV33
0
) is written into the location
through A
150
170
-20
0.5
20
8
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
A
A
A
OE
BHE
BLE
I/O
I/O
I/O
I/O
V
V
I/O
I/O
I/O
I/O
A
A
A
A
A
15
17
16
15
SS
CC
14
13
12
11
10
) are placed in a
15
14
13
12
11
10
9
8
17
).
408-943-2600
8
to I/O
130
150
-25
0.5
25
8
15
. See
0

Related parts for CY7C1041BV33-12ZC

CY7C1041BV33-12ZC Summary of contents

Page 1

... HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1041BV33 is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout. ...

Page 2

... CE > > < MAX Max Com’l/Ind’ > V – 0.3V, CC Com’l V > V – 0.3V < 0.3V CY7C1041BV33 [1] ................................ –0. Ambient [2] Temperature +70 C 3.3V – +85 C -12 -15 Min. Max. Min. Max. 2.4 2.4 0.4 0.4 2 0.5 + 0.5 –0.5 0.8 –0.5 0.8 – ...

Page 3

... Com’l/Ind’ > V – 0.3V, CC Com’ > V – 0.3V < 0.3V, f=0 IN Test Conditions MHz VENIN EQUIVALENT 3.3V 167 1.73V (b) GND Rise time: 1 V/ns CY7C1041BV33 -17 -20 -25 Min. Max. Min. Max. Min. Max. 2.4 2.4 2.4 0.4 0 0.5 0.5 –0.5 0.8 – ...

Page 4

... The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 8. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t Document #: 38-05168 Rev. ** Over the Operating Range Min less than less than t HZCE LZCE HZOE LZOE CY7C1041BV33 -12 -15 -17 Max. Min. Max. Min. Max ...

Page 5

... No input may exceed V + 0.5V. CC Document #: 38-05168 Rev. ** Over the Operating Range (continued) Min Over the Operating Range (For L version only) Conditions 2.0V > V – 0.3V > V – 0. CY7C1041BV33 -20 -25 Max. Min. Max [10] Min ...

Page 6

... Address valid prior to or coincident with CE transition LOW. Document #: 38-05168 Rev. ** DATA RETENTION MODE 3.0V V > CDR OHA [12, 13 ACE t DOE t LZOE t DBE t LZBE 50 CY7C1041BV33 3. DATA VALID t HZOE t HZCE t HZBE IMPEDANCE DATA VALID t PD 50% 1041BV33– 1041BV33-6 HIGH I ICC CC I ISB SB 1041BV33-7 Page ...

Page 7

... Write Cycle No. 2 (BLE or BHE Controlled) ADDRESS t SA BHE, BLE WE CE DATAI/O Notes: 14. Data I/O is high-impedance BHE and/or BLE goes HIGH simultaneously with WE going HIGH, the output remains in a high–impedance state. Document #: 38-05168 Rev. ** [14, 15 SCE PWE PWE t SCE . IH CY7C1041BV33 1041BV33 1041BV33-9 Page ...

Page 8

... High Z High Z Data Out Data Out Data Out High Z High Z Data Out Data In Data In Data In High Z High Z Data In High Z High Z CY7C1041BV33 LZWE Mode Power Down Standby (I Read All Bits Active (I Read Lower Bits Only Active (I Read Upper Bits Only Active (I ...

Page 9

... Ordering Information Speed (ns) Ordering Code 12 CY7C1041BV33-12VC CY7C1041BV33L-12VC CY7C1041BV33-12ZC CY7C1041BV33L-12ZC 15 CY7C1041BV33-15VC CY7C1041BV33L-15VC CY7C1041BV33-15ZC CY7C1041BV33L-15ZC CY7C1041BV33-15VI CY7C1041BV33-15ZI 17 CY7C1041BV33-17VC CY7C1041BV33L-17VC CY7C1041BV33-17ZC CY7C1041BV33L-17ZC CY7C1041BV33-17VI CY7C1041BV33-17ZI 20 CY7C1041BV33-20VC CY7C1041BV33L-20VC CY7C1041BV33-20ZC CY7C1041BV33L-20ZC CY7C1041BV33-20VI CY7C1041BV33-20ZI 25 CY7C1041BV33-25VC CY7C1041BV33L-25VC CY7C1041BV33-25ZC CY7C1041BV33L-25ZC CY7C1041BV33-25VI CY7C1041BV33-25ZI Document #: 38-05168 Rev. ** Package Name Package Type V34 ...

Page 10

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 44-Lead (400-Mil) Molded SOJ V34 44-Pin TSOP II Z44 CY7C1041BV33 51-85082-B 51-85087-A Page ...

Page 11

... Document Title: CY7C1041BV33 256K x 16 SRAM Document Number: 38-05168 Issue REV. ECN NO. Date ** 111840 11/17/01 Document #: 38-05168 Rev. ** Orig. of Change DSG Change from Spec number: 38-00932 to 38-05168 CY7C1041BV33 Description of Change Page ...

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