M29W160EB70ZA6 STMicroelectronics, M29W160EB70ZA6 Datasheet

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M29W160EB70ZA6

Manufacturer Part Number
M29W160EB70ZA6
Description
IC FLASH 16MBIT 70NS 48TFBGA
Manufacturer
STMicroelectronics
Datasheet

Specifications of M29W160EB70ZA6

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (2M x 8 or 1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3603
M29W160EB70ZA61122

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FEATURES SUMMARY
January 2004
SUPPLY VOLTAGE
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
35 MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
ERASE SUSPEND and RESUME MODES
UNLOCK BYPASS PROGRAM COMMAND
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
V
and Read
10µs per Byte/Word typical
1 Boot Block (Top or Bottom Location)
2 Parameter and 32 Main Blocks
Embedded Byte/Word Program
algorithms
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
64 bit Security Code
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29W160ET: 22C4h
Bottom Device Code M29W160EB: 2249h
CC
= 2.7V to 3.6V for Program, Erase
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
TFBGA48 (ZA)
TSOP48 (N)
12 x 20mm
6 x 8mm
M29W160EB
M29W160ET
FBGA
1/40

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M29W160EB70ZA6 Summary of contents

Page 1

... BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W160ET: 22C4h – Bottom Device Code M29W160EB: 2249h January 2004 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory Figure 1. Packages M29W160ET M29W160EB TSOP48 ( 20mm FBGA TFBGA48 (ZA 8mm 1/40 ...

Page 2

M29W160ET, M29W160EB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Chip Erase Command ...

Page 4

M29W160ET, M29W160EB APPENDIX A.BLOCK ADDRESS TABLE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

... Program or Erase commands from modifying the memory. Program and Erase commands are writ- ten to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents ...

Page 6

M29W160ET, M29W160EB Figure 3. TSOP Connections 6/40 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29W160ET M29W160EB A18 A17 ...

Page 7

Figure 4. TFBGA Connections (Top view through package A17 A18 ...

Page 8

M29W160ET, M29W160EB Figure 5. Block Addresses (x8) M29W160ET Top Boot Block Addresses (x8) 1FFFFFh 16 KByte 1FC000h 1FBFFFh 8 KByte 1FA000h 1F9FFFh 8 KByte 1F8000h 1F7FFFh 32 KByte 1F0000h 1EFFFFh 64 KByte 1E0000h 01FFFFh 64 KByte 010000h 00FFFFh 64 KByte ...

Page 9

Figure 6. Block Addresses (x16) M29W160ET Top Boot Block Addresses (x16) FFFFFh 8 KWord FE000h FDFFFh 4 KWord FD000h FCFFFh 4 KWord FC000h FBFFFh 16 KWord F8000h F7FFFh 32 KWord F0000h 0FFFFh 32 KWord 08000h 07FFFh 32 KWord 00000h Note: ...

Page 10

... Names, for a brief overview of the signals connect this device. Address Inputs (A0-A19). The Address Inputs select the cells in the memory array to access dur- ing Bus Read operations. During Bus Write opera- tions they control the commands sent to the Command Interface of the Program/Erase Con- troller ...

Page 11

... Disable, Standby and Automatic Standby. See Tables 2 and 3, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Bus Read. Bus Read operations read from the memory cells, or specific registers in the Com- mand Interface ...

Page 12

... From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with may be set to either V Code for STMicroelectronics is 0020h. The Device Code can be read using a Bus Read operation with address bits may be set to either V Device Code for the M29W160ET is 22C4h and for the M29W160EB is 2249h ...

Page 13

... Once the Unlock Bypass command has been is- sued the memory will only accept the Unlock By- pass Program command and the Unlock Bypass Reset command. The memory can be read Read mode. Unlock Bypass Program Command. The lock Bypass Program command can be used to program one address in memory at a time ...

Page 14

... Erase Suspend Latency Time (refer to Table 6 for value) of the Erase Suspend Command being issued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the ...

Page 15

... Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands. Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued. Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program com- mands on non-erasing blocks as normal. ...

Page 16

... Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands. Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued. Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program com- mands on non-erasing blocks as normal. ...

Page 17

... Program/Erase Controller. The Error Bit is set to ’1’ when a Pro- gram, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued before other commands are issued. The Error bit is output on DQ5 when the Status Register is read ...

Page 18

... One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’ Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase com- mand ...

Page 19

... Figure 8. Data Toggle Flowchart PASS AI03598 these or any other conditions above those indicat the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality docu- ments. Parameter (1,2) +2V during transition and for less than 20ns during transitions. ...

Page 20

M29W160ET, M29W160EB DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed ...

Page 21

Table 11. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) CC2 Supply Current (1) I CC3 (Program/Erase) V Input Low Voltage IL V Input High ...

Page 22

M29W160ET, M29W160EB Figure 11. Read Mode AC Waveforms A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 12. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid ...

Page 23

Figure 12. Write AC Waveforms, Write Enable Controlled A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 13. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...

Page 24

M29W160ET, M29W160EB Figure 13. Write AC Waveforms, Chip Enable Controlled A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...

Page 25

Figure 14. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 15. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH Output Enable ...

Page 26

M29W160ET, M29W160EB PACKAGE MECHANICAL Figure 15. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline DIE Note: Drawing is not to scale. Table 16. TSOP48 – 48 lead Plastic Thin Small ...

Page 27

Figure 16. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Outline FE BALL "A1" Table 17. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Mechanical Data Symbol Typ 6.000 ...

Page 28

... E = Lead-free Package, Standard Packing F = Lead-free Package, Tape & Reel Packing Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. ...

Page 29

APPENDIX A. BLOCK ADDRESS TABLE Table 19. Top Boot Block Addresses, M29W160ET Size Address Range # (KBytes) (x8 1FC000h-1FFFFFh 33 8 1FA000h-1FBFFFh 32 8 1F8000h-1F9FFFh 31 32 1F0000h-1F7FFFh 30 64 1E0000h-1EFFFFh 29 64 1D0000h-1DFFFFh 28 64 1C0000h-1CFFFFh 27 ...

Page 30

... The system can interface easily with the de- vice, enabling the software to upgrade itself when necessary. When the CFI Query Command is issued the de- vice enters CFI Query mode and the data structure is read from the memory. Tables 21, 22, 23, 24, 25 Table 21. Query Structure Overview Address x16 x8 ...

Page 31

Table 23. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 0000h 1Eh 3Ch 0000h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h 48h ...

Page 32

M29W160ET, M29W160EB Table 24. Device Geometry Definition Address Data x16 x8 27h 4Eh 0015h 28h 50h 0002h 29h 52h 0000h 2Ah 54h 0000h 2Bh 56h 0000h 2Ch 58h 0004h 2Dh 5Ah 0000h 2Eh 5Ch 0000h 2Fh 5Eh 0040h 30h 60h ...

Page 33

Table 25. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h 92h ...

Page 34

... Reset/Blocks Temporary Unprotect pin, RP. This can be achieved without violating the maximum ratings of the components on the micro- processor bus, therefore this technique is suitable for use after the Flash memory has been fitted to the system. ) volt protect a block follow the flowchart in Figure 19, In-System Block Protect Flowchart ...

Page 35

Figure 17. Programmer Equipment Block Protect Flowchart Note: 1. Address Inputs A19-A12 give the address of the block that protected imperative that they remain stable during the operation. 2. During the Protect and Verify phases ...

Page 36

M29W160ET, M29W160EB Figure 18. Programmer Equipment Chip Unprotect Flowchart NO = 1000 36/40 START PROTECT ALL BLOCKS CURRENT BLOCK = 0 A6, A12, A15 = V IH (1) ...

Page 37

Figure 19. In-System Equipment Block Protect Flowchart START WRITE 60h ADDRESS = BLOCK ADDRESS WRITE 60h ADDRESS = BLOCK ...

Page 38

M29W160ET, M29W160EB Figure 20. In-System Equipment Chip Unprotect Flowchart ++ 1000 ISSUE READ/RESET COMMAND FAIL 38/40 START PROTECT ALL BLOCKS CURRENT BLOCK = WRITE 60h ANY ...

Page 39

REVISION HISTORY Table 28. Document Revision History Date Version 06-Aug-2002 -01 First Issue: originates from M29W160D datasheet dated 24-Jun-2002 9x8mm FBGA48 package replaced by 6x8mm. VDD(min) reduced for -70ns speed class. 27-Nov-2002 1.1 Erase Suspend Latency Time (typical and maximum) ...

Page 40

... M29W160ET, M29W160EB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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