M29F800DB55N1 NUMONYX, M29F800DB55N1 Datasheet - Page 44

• Manufacturer Part Number: M29F800DB55N1
• Description: IC FLASH 8MBIT 55NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M29F800DB55N1

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 8M (1M x 8 or 512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Common Flash Interface (CFI)
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Table 24.
2Ch
2Dh
3Ch
2Ah
2Bh
2Eh
2Fh
3Ah
3Bh
x16
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
Address
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
x8
Device Geometry Definition
000Eh
0014h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
Region 1 Information
Number of identical size erase block = 0000h+1
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
Region 2 Information
Number of identical size erase block = 0001h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Region 3 Information
Number of identical size erase block = 0000h+1
Region 3 Information
Block size in Region 3 = 0080h * 256 byte
Region 4 Information
Number of identical-size erase block = 000Eh+1
Region 4 Information
Block size in Region 4 = 0100h * 256 byte
n
in number of bytes
Description
M29F800DT
n
16 Kbyte
32 Kbyte
64 Kbyte
1 MByte
8 Kbyte
x8, x16
Async.
Value
NA
15
4
1
2
1