M29F800DB55N6 NUMONYX, M29F800DB55N6 Datasheet - Page 29

• Manufacturer Part Number: M29F800DB55N6
• Description: IC FLASH 8MBIT 55NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M29F800DB55N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 8M (1M x 8 or 512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M29F800DT
Table 11.
1. Sampled only, not 100% tested.
Figure 10. Read Mode AC waveforms
Symbol
I
CC4
V
I
I
I
V
V
V
V
I
CC1
CC2
CC3
V
I
I
LKO
LO
OH
ID
OL
LI
A0-A18/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
IH
ID
IL
BYTE
(1)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Supply Current (Program/Erase)
Input Low voltage
Input High voltage
Output Low voltage
Output High voltage TTL CMOS
Identification voltage
Identification Current
Program/Erase Lockout Supply voltage
DC characteristics
tELBL/tELBH
Parameter
tAVQV
tBHQV
tELQX
tELQV
tGLQX
tGLQV
E = V
Program/Erase Controller active
tAVAV
VALID
E = V
CC
0V V
Test condition
IL
±0.2V, RP = V
I
0V V
OH
, G = V
I
OL
A9 = V
E = V
= –2.5mA
= 5.8mA
OUT
IN
IH
IH
tBLQZ
V
ID
, f = 6MHz
V
CC
CC
CC
VALID
±0.2V
tGHQX
tGHQZ
DC and AC parameters
–0.5
11.5
Min
2.4
3.2
2
tEHQZ
V
CC
Max
0.45
12.5
150
100
0.8
4.2
±1
±1
20
20
2
+ 0.5
tEHQX
tAXQX
Unit
AI06154
mA
mA
mA
29/53
µ
µ
µ
µ
V
V
V
V
V
V
A
A
A
A