M29F800DB55N6 NUMONYX, M29F800DB55N6 Datasheet - Page 32

• Manufacturer Part Number: M29F800DB55N6
• Description: IC FLASH 8MBIT 55NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M29F800DB55N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 8M (1M x 8 or 512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
Table 13.
1. Sampled only, not 100% tested.
Figure 12. Write AC waveforms, Chip Enable controlled
32/53
Symbol
t
WHRL
t
t
t
t
t
t
t
t
t
t
t
VCHEL
t
WLWH
WHWL
DVWH
WHDX
WHEH
GHWL
WHGL
AVWL
WLAX
ELWL
AVAV
A0-A18/
A–1
W
G
E
DQ0-DQ7/
DQ8-DQ15
V CC
RB
(1)
Write AC characteristics, Write Enable controlled
t
t
t
BUSY
t
t
WPH
t
t
t
t
t
t
OEH
VCS
Alt
t
WC
WP
CS
DS
DH
CH
AS
AH
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Address Valid to Write Enable Low
Write Enable Low to Address Transition
Output Enable High to Write Enable Low
Write Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
CC
tVCHWL
High to Chip Enable Low
tWLEL
tGHEL
tAVEL
Parameter
tAVAV
VALID
tELEH
tDVEH
tEHRL
VALID
tELAX
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tEHWH
tEHGL
tEHEL
tEHDX
55
55
45
45
20
45
30
50
0
0
0
0
0
0
M29F800D
70/ 90
70
45
45
20
45
30
50
0
0
0
0
0
0
AI06156
M29F800DT
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs