M29F800DB55N6E NUMONYX, M29F800DB55N6E Datasheet - Page 14

• Manufacturer Part Number: M29F800DB55N6E
• Description: IC FLASH 8MBIT 55NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M29F800DB55N6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 8M (1M x 8 or 512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Bus operations
3
3.0.1
3.0.2
3.0.3
3.0.4
3.0.5
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Bus operations
There are five standard bus operations that control the device. These are Bus Read, Bus
Write, Output Disable, Standby and Automatic Standby. See
=
than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus
operations.
Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, V
Enable High, V
AC
becomes valid.
Bus Write
Bus Write operations write to the Command Interface. A valid Bus Write operation begins by
setting the desired address on the Address Inputs. The Address Inputs are latched by the
Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs
last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of
Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, V
during the whole Bus Write operation. See
controlled,
characteristics, Write Enable
Enable
Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, V
Standby
When Chip Enable is High, V
Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to
the Standby Supply Current, I
Standby current level see
During program or erase operations the memory will continue to use the Program/Erase
Supply Current, I
Automatic Standby
If CMOS levels (V
more the memory enters Automatic Standby where the internal Supply Current is reduced to
the Standby Supply Current, I
Read operation is in progress.
VIL, and
waveforms, and
controlled, for details of the timing requirements.
Table 3: Bus operations, BYTE = VIH
Figure 12: Write AC waveforms, Chip Enable
IH
. The Data Inputs/Outputs will output the value, see
CC3
CC
Table 12: Read AC characteristics
, for Program or Erase operations until the operation completes.
± 0.2V) are used to drive the bus and the bus is inactive for 150ns or
Table 11: DC
IH
controlled, and
CC2
CC2
, the memory enters Standby mode and the Data
IL
, to Chip Enable and Output Enable and keeping Write
, Chip Enable should be held within V
. The Data Inputs/Outputs will still output data if a Bus
characteristics.
Figure 11: Write AC waveforms, Write Enable
Table 14: Write AC characteristics, Chip
for a summary. Typically glitches of less
for details of when the output
controlled,
Table 2: Bus operations, BYTE
Table 13: Write AC
Figure 10: Read Mode
CC
± 0.2V. For the
M29F800DT
IH
IH
,
.