M58BW016DB7T3TNX NUMONYX, M58BW016DB7T3TNX Datasheet - Page 41

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M58BW016DB7T3TNX

Manufacturer Part Number
M58BW016DB7T3TNX
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016DB7T3TNX

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016DB7T3TNXCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW016DB7T3TNX
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 8.
Table 16.
1. Output Enable G may be delayed up to t
Symbol
t
.
A0-A18
L
E
ELQV
G
GD
DQ0-DQ31
t
t
t
t
t
t
t
t
t
t
t
t
EHQX
GHQX
GHQZ
AVQV
AXQX
EHQZ
GLQV
GLQX
EHLX
ELQX
AVAV
LLEL
increasing t
(1)
Address Valid to Address Valid
Address Valid to Output Valid
Address Transition to Output Transition
Chip Enable High to Latch Enable Transition
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Chip Enable Low to Output Transition
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable to Output Transition
Latch Enable Low to Chip Enable Low
ELQV
Asynchronous bus read AC waveforms
Asynchronous bus read AC characteristics
.
tLLEL
Parameter
tAVQV
tELQX
tELQV
tGLQX
tGLQV
ELQV
tAVAV
VALID
- t
GLQV
after the falling edge of Chip Enable E without
See also Page Read
E = V
E = V
E = V
tEHLX
OUTPUT
Test condition
G = V
G = V
G = V
G = V
E = V
E = V
E = V
E = V
IL
IL
IL
, G = V
, G = V
, G = V
IL
IL
IL
IL
IL
IL
IL
IL
tGHQX
tGHQZ
IL
IL
IL
tEHQX
tEHQZ
DC and AC parameters
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
tAXQX
M58BW016
70
70
70
20
70
15
25
0
0
0
0
0
0
0
80
80
80
20
80
15
25
0
0
0
0
0
0
0
AI04407C
Unit
41/70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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