M58BW016DB7T3TNX NUMONYX, M58BW016DB7T3TNX Datasheet - Page 46

• Manufacturer Part Number: M58BW016DB7T3TNX
• Description: IC FLASH 16MBIT 70NS 80PQFP
• Manufacturer: NUMONYX

Specifications of M58BW016DB7T3TNX

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (512K x 32)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-MQFP, 80-PQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: M58BW016DB7T3TNXCT

DC and AC parameters
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Table 19.
Symbol
t
t
t
t
t
t
t
t
t
VPHWH
t
t
t
t
t
QVVPL
t
WHWL
t
t
t
WHAX
WHDX
WHEH
WHGL
WHQV
WLWH
AVWH
DVWH
LLWH
ELWL
LHAX
QVPL
AVLL
ELLL
LLLH
Address Valid to Latch Enable Low
Address Valid to Write Enable High
Data Input Valid to Write Enable High
Chip Enable Low to Latch Enable Low
Chip Enable Low to Write Enable Low
Latch Enable High to Address Transition
Latch Enable Low to Latch Enable High
latch Enable Low to Write Enable High
Output Valid to V
V
Write Enable High to Address Transition
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Output Enable Low
Write Enable High to Output Valid
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Output Valid to Reset/Power-down Low
PP
Asynchronous write and latch controlled write AC characteristics
High to Write Enable High
Parameter
PP
Low
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Test condition
E = V
E = V
E = V
E = V
E = V
E = V
IL
IL
IL
IL
IL
IL
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
150
175
M58BW016
70
50
50
10
50
20
60
0
0
0
5
0
0
0
0
0
0
150
175
80
50
50
10
50
20
60
0
0
0
5
0
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns