M58BW016DB7T3TNX NUMONYX, M58BW016DB7T3TNX Datasheet - Page 49

• Manufacturer Part Number: M58BW016DB7T3TNX
• Description: IC FLASH 16MBIT 70NS 80PQFP
• Manufacturer: NUMONYX

Specifications of M58BW016DB7T3TNX

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (512K x 32)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-MQFP, 80-PQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: M58BW016DB7T3TNXCT

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 15. Synchronous burst read - continuous - valid data ready output
1. Valid Data Ready = Valid Low during valid clock edge.
2. V= Valid output.
3. R is an open drain output with an internal pull up resistor of 1 M
Figure 16. Synchronous burst read - burst address advance
typically 300 k
that valid data is available on the next valid clock edge.
K
ADD
L
ADD
G
B
K
Output
R
(1)
for a single memory on the R bus, should be used to give the data valid set up time required to recognize
VALID
V
V
tGLQV
V
tRLKH
tBLKH
The internal timing of R follows DQ. An external resistor,
Q0
(2)
V
Q1
tBHKH
V
Q2
DC and AC parameters
AI03649
AI03650
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