M58BW016DB7T3TNX NUMONYX, M58BW016DB7T3TNX Datasheet - Page 58

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M58BW016DB7T3TNX

Manufacturer Part Number
M58BW016DB7T3TNX
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016DB7T3TNX

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016DB7T3TNXCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW016DB7T3TNX
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Common Flash interface (CFI)
58/70
Table 30.
Address
(P+A)h
(P+1)h
(P+2)h
(P+3)h
(P+4)h
(P+5)h
(P+6)h
(P+7)h
(P+8)h
(P+9)h
offset
(P)h
Address
A18-A0
Extended query information
3Ah
3Bh
3Ch
3Dh
3Eh
3Fh
35h
36h
37h
38h
39h
Reserved
50h
52h
49h
Data (Hex)
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
31h
31h
86h
01h
00h
00h
01h
"P"
"R"
"Y"
Query ASCII string - extended table
Major version number
Minor version number
Optional feature: (1=yes, 0=no)
bit0, Chip Erase supported (0=no)
bit1, Suspend Erase supported (1=yes)
bit2, Suspend Program supported (1=yes)
bit3, Lock/Unlock supported (1=yes)
bit4, Queue Erase supported (0=no)
bit 31-5 reserved for future use
Optional features: synchronous read supported
Function allowed after suspend:
Program allowed after Erase Suspend (1=yes)
Bit 7-1 reserved for future use
Description

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