M58BW016DB7T3TNX NUMONYX, M58BW016DB7T3TNX Datasheet - Page 59

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M58BW016DB7T3TNX

Manufacturer Part Number
M58BW016DB7T3TNX
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016DB7T3TNX

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016DB7T3TNXCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW016DB7T3TNX
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Appendix B
Figure 22. Program flowchart and pseudocode
1. If an error is found, the status register must be cleared before further program/erase operations.
Write Address
Read Status
Write 40h
Register
& Data
b7 = 1
b3 = 0
b4 = 0
b1 = 0
Start
End
YES
YES
YES
YES
Flowcharts
NO
NO
NO
NO
Program to Protect
V PP Invalid
Block Error
Program
Error (1)
Error (1)
Program Command:
– write 40h
– write Address & Data
(memory enters read status
state after the Program command)
do:
– read status register
while b7 = 0
If b3 = 1, V PP invalid error:
– error handler
If b4 = 1, Program error:
– error handler
If b1 = 1, Program to Protected Block Error:
– error handler
(E or G must be toggled)
AI03850b
Flowcharts
59/70

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