M58BW016FB7T3F NUMONYX, M58BW016FB7T3F Datasheet - Page 37

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M58BW016FB7T3F

Manufacturer Part Number
M58BW016FB7T3F
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016FB7T3F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M58BW016FB7T3FCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW016FB7T3F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M58BW016FB7T3F
Manufacturer:
MICRON
Quantity:
20 000
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
6
Maximum ratings
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE Program
and other relevant quality documents.
Table 12.
1. Cumulative time at a high voltage level of 13.5 V should not exceed 80 hours on V
V
DD
, V
Symbol
T
DDQ,
T
V
V
BIAS
STG
PP
IO
V
Absolute maximum ratings
DDQIN
Temperature under bias
Storage temperature
Input or output voltage
Supply voltage
Program voltage
Parameter
Table 12: Absolute maximum
–0.6
–0.6
–0.6
Min
–40
–55
PP
Value
V
pin.
V
DDQIN
Maximum ratings
DDQ
13.5
Max
125
155
4.2
ratings, may
+ 0.6
+ 0.6
(1)
Unit
37/70
°C
°C
V
V
V

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