M58BW016FB7T3F NUMONYX, M58BW016FB7T3F Datasheet - Page 42

• Manufacturer Part Number: M58BW016FB7T3F
• Description: IC FLASH 16MBIT 70NS 80PQFP
• Manufacturer: NUMONYX

Specifications of M58BW016FB7T3F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (512K x 32)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-MQFP, 80-PQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M58BW016FB7T3FCT

DC and AC parameters
42/70
Figure 9.
Table 17.
Symbol
A0-A18
L
E
G
DQ0-DQ31
t
t
t
t
t
t
t
t
t
t
t
t
t
t
GHQX
GHQZ
EHQX
EHQZ
GLQV
GLQX
EHLX
LHAX
LLQV
LLQX
AVLL
ELLL
LHLL
LLLH
Address Valid to Latch Enable Low
Chip Enable High to Latch Enable Transition
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
Chip Enable Low to Latch Enable Low
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
Latch Enable High to Address Transition
Latch Enable High to Latch Enable Low
Latch Enable Low to Latch Enable High
Latch Enable Low to Output Valid
Latch Enable Low to Output Transition
tAVLL
Asynchronous latch controlled bus read AC waveforms
Asynchronous latch controlled bus read AC characteristics
tLHLL
Parameter
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
VALID
tELLL
tGLQX
tGLQV
tLLLH
tLLQX
tLLQV
tLHAX
E = V
E = V
Test condition
E = V
G = V
G = V
E = V
E = V
E = V
E = V
E = V
E = V
IL
IL
, G = V
, G = V
IL
IL
IL
IL
IL
IL
IL
IL
IL
See also Page Read
OUTPUT
IL
IL
tEHQX
tEHQZ
tEHLX
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tGHQX
GHQZ
M58BW016
70
20
15
25
10
10
70
0
0
0
0
0
0
5
0
80
20
15
25
10
10
80
0
0
0
0
0
0
5
0
AI03645
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns