M58BW016FB7T3T NUMONYX, M58BW016FB7T3T Datasheet - Page 33

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M58BW016FB7T3T

Manufacturer Part Number
M58BW016FB7T3T
Description
IC FLASH 16MBIT 70NS 80PQFP
Manufacturer
NUMONYX
Datasheet

Specifications of M58BW016FB7T3T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (512K x 32)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
80-MQFP, 80-PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
M58BW016FB7T3TCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58BW016FB7T3T
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M58BW016FB7T3T
Manufacturer:
ST
0
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 10.
1. T
Parameter Block (64 Kbits)
Program
Main Block (512 Kbits)
Program
Parameter Block Erase
Main Block Erase
Program Suspend Latency
time
Erase Suspend Latency time
Program/Erase cycles (per
block)
A
= –40 to 125 °C, V
Parameters
Program, erase times and program, erase endurance cycles
DD
= 2.7 V to 3.6 V, V
100,000
Min
DDQ
V
PP
0.030
= 2.4 V to V
0.23
0.8
1.5
= V
DD
Typ
10
3
V
DD
M58BW016
PP
0.016
0.13
0.64
.
0.9
= 12 V V
PP
0.060
0.46
1.8
= V
3
DD
Command interface
Max
10
30
V
PP
0.032
0.26
1.5
1.8
(1)
= 12 V
cycles
Unit
33/70
µs
µs
s
s
s
s

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