M58BW016FB7T3T

Manufacturer Part NumberM58BW016FB7T3T
DescriptionIC FLASH 16MBIT 70NS 80PQFP
ManufacturerNUMONYX
M58BW016FB7T3T datasheet
 

Specifications of M58BW016FB7T3T

Format - MemoryFLASHMemory TypeFLASH
Memory Size16M (512K x 32)Speed70ns
InterfaceParallelVoltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 125°CPackage / Case80-MQFP, 80-PQFP
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther namesM58BW016FB7T3TCT
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DC and AC parameters
Table 19.
Asynchronous write and latch controlled write AC characteristics
Symbol
t
Address Valid to Latch Enable Low
AVLL
t
Address Valid to Write Enable High
AVWH
t
Data Input Valid to Write Enable High
DVWH
t
Chip Enable Low to Latch Enable Low
ELLL
t
Chip Enable Low to Write Enable Low
ELWL
t
Latch Enable High to Address Transition
LHAX
t
Latch Enable Low to Latch Enable High
LLLH
t
latch Enable Low to Write Enable High
LLWH
t
Output Valid to V
QVVPL
t
V
High to Write Enable High
VPHWH
PP
t
Write Enable High to Address Transition
WHAX
t
Write Enable High to Input Transition
WHDX
t
Write Enable High to Chip Enable High
WHEH
t
Write Enable High to Output Enable Low
WHGL
t
Write Enable High to Output Valid
WHQV
t
Write Enable High to Write Enable Low
WHWL
t
Write Enable Low to Write Enable High
WLWH
t
Output Valid to Reset/Power-down Low
QVPL
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Parameter
Test condition
E = V
E = V
E = V
Low
PP
E = V
E = V
E = V
M58BW016
Unit
70
80
Min
0
0
ns
Min
50
50
ns
IL
Min
50
50
ns
IL
Min
0
0
ns
Min
0
0
ns
Min
5
5
ns
Min
10
10
ns
Min
50
50
ns
IL
Min
0
0
ns
Min
0
0
ns
Min
0
0
ns
IL
Min
0
0
ns
IL
Min
0
0
ns
Min
150
150
ns
Min
175
175
ns
Min
20
20
ns
Min
60
60
ns
IL
Min
0
0
ns