M58BW016FB7T3T

Manufacturer Part NumberM58BW016FB7T3T
DescriptionIC FLASH 16MBIT 70NS 80PQFP
ManufacturerNUMONYX
M58BW016FB7T3T datasheet
 

Specifications of M58BW016FB7T3T

Format - MemoryFLASHMemory TypeFLASH
Memory Size16M (512K x 32)Speed70ns
InterfaceParallelVoltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 125°CPackage / Case80-MQFP, 80-PQFP
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther namesM58BW016FB7T3TCT
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 15. Synchronous burst read - continuous - valid data ready output
K
(1)
Output
V
V
R
1. Valid Data Ready = Valid Low during valid clock edge.
2. V= Valid output.
3. R is an open drain output with an internal pull up resistor of 1 M
typically 300 k
for a single memory on the R bus, should be used to give the data valid set up time required to recognize
that valid data is available on the next valid clock edge.
Figure 16. Synchronous burst read - burst address advance
K
ADD
VALID
L
ADD
G
B
V
V
V
tRLKH
(2)
The internal timing of R follows DQ. An external resistor,
Q0
Q1
tGLQV
tBLKH
tBHKH
DC and AC parameters
AI03649
Q2
AI03650
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